Datasheet > MJ3001

MJ3001

更新时间： 2024-10-14 10:55:55

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	118K
描述
Silicon NPN Power Transistors

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MJ3001 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

MJ3000/3001

DESCRIPTION

·With TO-3 package

·DARLINGTON

·High DC current gain

·Complement to type MJ2500/2501

APPLICATIONS

·For use as output devices in complementary

general purpose amplifier applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

ABSOLUTE MAXIMUM RATINGS(T_C=25ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

MJ3000

MJ3001

MJ3000

MJ3001

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

Emitter-base voltage

Collector current

Open collector

ꢀ

I_B

Base current

0.2

P_D

T_j

Total power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

200

-55~200

ꢀ

T_stg

12 3

中文翻译

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