Datasheet > MJ2194

MJ2194

更新时间： 2024-09-23 22:30:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
6页	176K
描述
16 ampere complementary silicon power transistors 250 volts 250 watts

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MJ2194 数据手册

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by MJ21193/D

SEMICONDUCTOR TECHNICAL DATA

The MJ21193 and MJ21194 utilize Perforated Emitter technology and are

specifically designed for high power audio output, disk head positioners and linear

applications.

*Motorola Preferred Device

16 AMPERE

COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 VOLTS

•

Total Harmonic Distortion Characterized

• High DC Current Gain – h

• Excellent Gain Linearity

= 25 Min @ I = 8 Adc

• High SOA: 2.5 A, 80 V, 1 Second

250 WATTS

CASE 1–07

TO–204AA

(TO–3)

MAXIMUM RATINGS

Rating

Symbol

Value

250

400

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

CEO

CBO

EBO

Emitter–Base Voltage

Collector–Emitter Voltage – 1.5 V

CEX

400

Collector Current — Continuous

(1)

Collector Current — Peak

Base Current — Continuous

Adc

Total Power Dissipation @ T = 25°C

Derate Above 25°C

250

1.43

Watts

W/°C

Operating and Storage Junction Temperature Range

T , T

– 65 to +200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.7

°C/W

θJC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typical

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(I = 100 mAdc, I = 0)

250

—

Vdc

CEO(sus)

Collector Cutoff Current

(V = 200 Vdc, I = 0)

100

µAdc

CEO

(1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤10%.

(continued)

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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