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MJ21193G PDF预览

MJ21193G

更新时间： 2024-09-24 03:49:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器PC局域网
页数 文件大小 规格书
6页 73K
描述
Silicon Power Transistors

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中文翻译

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MJ21193G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-3包装说明：ROHS COMPLIANT, CASE 1-07, TO-3, 2 PIN
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.82Samacsys Confidence：4
Samacsys Status：ReleasedSamacsys PartID：225671
Samacsys Pin Count：4Samacsys Part Category：Transistor BJT PNP
Samacsys Package Category：OtherSamacsys Footprint Name：MJ21193G-2
Samacsys Released Date：2017-05-04 08:42:30Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：16 A
集电极-发射极最大电压：250 V配置：SINGLE
最小直流电流增益 (hFE)：8JEDEC-95代码：TO-204AA
JESD-30 代码：O-MBFM-P2JESD-609代码：e3
元件数量：1端子数量：2
最高工作温度：200 °C封装主体材料：METAL
封装形状：ROUND封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：250 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：PIN/PEG
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：4 MHzBase Number Matches：1

MJ21193G 数据手册

 浏览型号MJ21193G的Datasheet PDF文件第2页浏览型号MJ21193G的Datasheet PDF文件第3页浏览型号MJ21193G的Datasheet PDF文件第4页浏览型号MJ21193G的Datasheet PDF文件第5页浏览型号MJ21193G的Datasheet PDF文件第6页 
MJ21193, MJ21194  
Preferred Device  
Silicon Power Transistors  
The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter  
technology and are specifically designed for high power audio output,  
disk head positioners and linear applications.  
Features  
http://onsemi.com  
• Total Harmonic Distortion Characterized  
• High DC Current Gain − h = 25 Min @ I = 8 Adc  
FE  
C
16 AMP COMPLEMENTARY  
SILICON POWER  
• Excellent Gain Linearity  
• High SOA: 2.5 A, 80 V, 1 Second  
• Pb−Free Packages are Available*  
TRANSISTORS  
250 VOLTS, 250 WATTS  
MARKING  
DIAGRAM  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
250  
400  
5
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector−Emitter Voltage − 1.5 V  
V
CEO  
V
CBO  
V
EBO  
TO−204AA  
(TO−3)  
CASE 1−07  
MJ2119x  
MEXICO  
YY WWG  
V
400  
CEX  
Collector Current − Continuous  
Peak (Note 1)  
I
16  
30  
C
Base Current − Continuous  
I
5
Adc  
B
x
= 3 or 4  
Total Power Dissipation @ T = 25°C  
Derate Above 25°C  
P
250  
1.43  
W
W/°C  
C
D
MEXICO = Assembly Location  
YY  
WW  
G
= Year  
= Work Week  
= Pb−Free Package  
Operating and Storage Junction  
Temperature Range  
T , T  
−ꢀ 65 to +200  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
Thermal Resistance, Junction−to−Case  
R
q
JC  
0.7  
°C/W  
†
Device  
Package  
Shipping  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJ21193  
TO−3  
100 Units / Tray  
100 Units / Tray  
MJ21193G  
TO−3  
(Pb−Free)  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤10%. (continued)  
MJ21194  
TO−3  
100 Units / Tray  
100 Units / Tray  
MJ21194G  
TO−3  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
June, 2005 − Rev. 4  
MJ21193/D  
 
123456

中文翻译

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MJ21193G 替代型号

型号 品牌 替代类型 描述 数据表
MJ21195G ONSEMI

类似代替

 Silicon Power Transistors
2ST2121 STMICROELECTRONICS

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 High power PNP epitaxial planar bipolar transistor
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