Datasheet > MJ11015_08

MJ11015_08

更新时间： 2024-09-24 10:55:55

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	116K
描述
High-Current Complementary Silicon Transistors

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中文翻译

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数据手册

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MJ11015_08 数据手册

MJ11015 (PNP); MJ11012,

MJ11016 (NPN)

MJ11016 is a Preferred Device

High-Current

Complementary Silicon

Transistors

http://onsemi.com

. . . for use as output devices in complementary general purpose

amplifier applications.

30 AMPERE DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY SILICON

60 − 120 VOLTS, 200 WATTS

• High DC Current Gain −

= 1000 (Min) @ I − 20 Adc

• Monolithic Construction with Built−in Base Emitter Shunt

Resistor

• Junction Temperature to +200_C

NPN

PNP

COLLECTOR

CASE

COLLECTOR

CASE

MAXIMUM RATINGS

BASE

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

CEO

Vdc

MJ11012

MJ11015/6

120

EMITTER 2

MJ11016

MJ11012

MJ11015

Collector−Base Voltage

Vdc

MJ11012

MJ11015/6

120

Emitter−Base Voltage

Collector Current

Base Current

Vdc

Adc

MARKING

DIAGRAM

TO−204AA (TO−3)

CASE 1−07

Total Device Dissipation @ T = 25°C

200

Derate above 25°C @ T = 100°C

1.15

W/°C

Operating Storage Junction

Temperature Range

T , T

−55 to +200

°C

MJ1101xG

AYYWW

MEX

stg

STYLE 1

THERMAL CHARACTERISTICS

Characteristic

MJ1101x = Device Code

x = 2, 5 or 6

Symbol

Max

0.87

275

Unit

°C/W

°C

MEX

= Pb−Free Package

= Location Code

= Year

Thermal Resistance, Junction−to−Case

Maximum Lead Temperature for Sol-

dering Purposes for ≤ 10 Seconds

= Work Week

= Country of Orgin

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

Device

Package

Shipping

MJ11012

TO−3

100 Units/Tray

MJ11012G

TO−3

(Pb−Free)

MJ11015

TO−3

100 Units/Tray

MJ11015G

TO−3

(Pb−Free)

MJ11016

TO−3

100 Units/Tray

MJ11016G

TO−3

(Pb−Free)

Preferred devices are recommended choices for future use

and best overall value.

Publication Order Number:

September, 2008 − Rev. 5

MJ11012/D

12 3 4

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MJ11016	ONSEMI	获取价格	DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON
MJ11016	MOSPEC	获取价格	POWER TRANSISTORS(30A,60-120V,200W)
MJ11016	CENTRAL	获取价格	Power Transistors