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MJ11015 PDF预览

MJ11015

更新时间: 2024-09-23 22:46:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
4页 160K
描述
DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

MJ11015 数据手册

 浏览型号MJ11015的Datasheet PDF文件第2页浏览型号MJ11015的Datasheet PDF文件第3页浏览型号MJ11015的Datasheet PDF文件第4页 
Order this document  
by MJ11012/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . for use as output devices in complementary general purpose amplifier applica-  
tions.  
High DC Current Gain — h = 1000 (Min) @ I – 20 Adc  
FE C  
Monolithic Construction with Built–in Base Emitter Shunt Resistor  
Junction Temperature to +200 C  
*Motorola Preferred Device  
MAXIMUM RATINGS  
MJ11013 MJ11015  
MJ11012 MJ11014 MJ11016  
30 AMPERE  
DARLINGTON  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
V
CEO  
60  
60  
90  
90  
5
120  
120  
V
CB  
EB  
V
60120 VOLTS  
200 WATTS  
I
C
30  
1
Base Current  
I
B
Total Device Dissipation @T = 25 C  
Derate above 25 C @ T = 100 C  
C
P
D
200  
1.15  
Watts  
W/ C  
C
Operating Storage Junction  
Temperature Range  
T , T  
J stg  
55 to +200  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C
CASE 1–07  
TO–204AA  
(TO–3)  
Thermal Resistance, Junction to Case  
R
0.87  
275  
θJC  
Maximum Lead Temperature for  
T
L
Soldering Purposes for  
10 Seconds.  
COLLECTOR  
COLLECTOR  
PNP  
NPN  
MJ11013  
MJ11015  
MJ11012  
MJ11014  
MJ11016  
BASE  
BASE  
8.0 k  
40  
8.0 k  
40  
EMITTER  
EMITTER  
Figure 1. Darlington Circuit Schematic  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995

MJ11015 替代型号

型号 品牌 替代类型 描述 数据表
MJ11015G ONSEMI

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