Datasheet > MJ11014

MJ11014

更新时间： 2024-09-24 10:55:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	52K
描述
isc Silicon NPN Darlington Power Transistor

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MJ11014 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

MJ11014

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 90V(Min.)

·High DC Current Gain-

: h_FE= 1000(Min.)@I_C= 20A

·Low Collector Saturation Voltage-

: V_{CE (sat)}= 3.0V(Max.)@ I_C= 20A

·Complement to Type MJ11013

APPLICATIONS

·Designed for use as output devices in complementary

general purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS (T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continunous

Collector Current-Peak

Base Current-Continunous

I_CM

I_B

Collector Power Dissipation

@T_C=25℃

P_C

200

-55~+200

℃

T_j

Junction Temperature

T_stg

Storage Temperature Range

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

0.87

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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