Datasheet > MIW30N65AH1Y

MIW30N65AH1Y

更新时间： 2024-11-30 14:55:23

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
9页	2041K
描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MIW30N65AH1Y 数据手册

MIW30N65AH1Y

Features

•

Low Switching Losses

Maximum Junction Temperature 175℃

Positive Temperature Coefficient

Trench and

High Ruggedness, Temperature Stable

High Short Circuit Capability(5us)

Field Stop

Halogen Free. “Green” Device (Note 1)

Epoxy Meets UL 94 V-0 Flammability Rating

•

IGBT 650V 30A

Lead Free Finish/RoHS Compliant (Note 2)("P" Suffix

Designates RoHS Compliant. See Ordering Information)

Maximum Ratings

•

Operating Junction Temperature Range : -40°C to +175°C

Storage Temperature Range: -55°C to +150°C

TO-247AB

IGBT Thermal Resistance: 0.8°C/W Junction to Case

Diode Thermal Resistance: 1.4°C/W Junction to Case

Thermal Resistance: 40°C/W Junction to Ambient

Parameter

Rating

650

Symbol

Unit

V_CE

Collector‐Emitter Voltage

T_C=25℃

DC Collector Current⁽²⁾

I_C

I_C,pluse

I_F

T_C=100℃

Pulsed Collector Current ⁽³⁾,V_GE=15V

120

T_C=25℃

Diode Forward Current ⁽²⁾

T_C=100℃

Diode Pulsed Current ⁽³⁾

I_F,pluse

V_GE

120

±20

±30

DIMENSIONS

INCHES MM

MIN MAX

0.189 0.205 4.80

0.087 0.103 2.21

0.073 0.085 1.85

0.039 0.055 1.00

0.075 0.087 1.91

0.020 0.028 0.50

0.815 0.839 20.70 21.30

0.640 0.663 16.25 16.85

0.610 0.634 15.50 16.10

0.512 0.535 13.00 13.60

Continuous Gate‐Emitter Voltage

Transient Gate‐Emitter Voltage⁽⁴⁾

Short Circuit Withstand Time ⁽⁵⁾

V_GE=15V, V_CC=400V, V_CEM≤650V

DIM

NOTE

MIN

MAX

5.20

2.61

2.15

1.40

2.21

0.70

t_SC

μs

T_C=25℃

Power Dissipation

P_D

187

T_j=175℃

Note:

1. Halogen free "Green” products are defined as those which contain <900ppm bromine,

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

0.189 0.205 4.80

0.091 0.106 2.30

5.20

2.70

2. Limited by T_Jmax

3. t_plimited by T_Jmax

0.772 0.796 19.62 20.22

4. t_p≤10us, Duty Cycle<1%

0.169

0.134 0.150 3.40

0.287

0.242

0.214

0.110 0.126 2.80

4.30

3.80

7.30

5. Allowed number of short circuits: <1000; time between short circuits: >1s.

TYP

Internal Structure

6.15

5.44

3.20

2(C)

MCC

MIW30N65AH1Y

Device Code:MIW30N65AH1Y

Date Code:YYWW: (Year & Week)

YYWW

1(G)

3(E)

Rev.4-1-05112023

1/9

MCCSEMI.COM

12 3 4 5 6 7...9

中文翻译

下载PDF

与MIW30N65AH1Y相关器件

型号	品牌	获取价格	描述	数据表
MIW30N65FA	MCC	获取价格
MIW30N65FLA	MCC	获取价格
MIW3100	MINMAX	获取价格	5-6W, Wide Input Range DIP, Single & Dual Output DC/DC Converters
MIW3100_11	MINMAX	获取价格	DC/DC CONVERTER 6W, DIP-24 Plastic Package
MIW3121	MINMAX	获取价格	5-6W, Wide Input Range DIP, Single & Dual Output DC/DC Converters
MIW3122	MINMAX	获取价格	5-6W, Wide Input Range DIP, Single & Dual Output DC/DC Converters
MIW3123	MINMAX	获取价格	5-6W, Wide Input Range DIP, Single & Dual Output DC/DC Converters
MIW3126	MINMAX	获取价格	5-6W, Wide Input Range DIP, Single & Dual Output DC/DC Converters
MIW3127	MINMAX	获取价格	5-6W, Wide Input Range DIP, Single & Dual Output DC/DC Converters
MIW3131	MINMAX	获取价格	5-6W, Wide Input Range DIP, Single & Dual Output DC/DC Converters

与MIW30N65AH1Y相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

63

产品中心

服务支持

精选活动

关于我们

帮助中心

MIW30N65AH1Y

MIW30N65AH1Y 数据手册

与MIW30N65AH1Y相关器件

与MIW30N65AH1Y相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MIW30N65AH1Y

MIW30N65AH1Y 数据手册

与MIW30N65AH1Y相关器件

与MIW30N65AH1Y相关文章

您还可以找

您在本页遇到什么问题？