Datasheet > MGF0915A_03

MGF0915A_03

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	46K
描述
L & S BAND GaAs FET

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MGF0915A_03 数据手册

MITSUBISHI SEMICONDUCTOR<GaAs FET>

MGF0915A

L & S BAND GaAs FET [ SMD non - matched ]

DESCRIPTION

The MGF0915A GaAs FET with an N-channel schottky

Gate, is designed for use UHF band amplifiers.

FEATURES

· High output power

Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm

· High power gain

Gp=14.5 dB(TYP.) @f=1.9GHz

· High power added efficiency

hadd=50 %(TYP.) @f=1.9GHz,Pin=23dBm

· Hermetic Package

APPLICATION

· For UHF Band power amplifiers

Fig.1

QUALITY

· GG

RECOMMENDED BIAS CONDITIONS

· Vds=10V · Ids=800 mA · Rg=100W

Delivery

-01:Tape & Reel(1K), -03:Trai(50pcs)

Absolute maximum ratings (Ta=25°C)

Symbol

VGSO

Parameter

Ratings

-15

Unit

Gate to source

breakdown voltage

VGDO Gate to drain breakdown voltage

-15

Drain current

3000

-10

IGR

IGF

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

18.7

Tch

Tstg

175

°C

-65 to +175

Electrical characteristics

(Ta=25°C)

Symbol

Parameter

Test conditions

Limits

Typ.

2400

-3

Unit

Min.

Max.

Saturated drain current

Gate to source cut-off voltage

Transconductance

VDS=3V,VGS=0V

3000

IDSS

VDS=3V,ID=10mA

-1

-5

VGS(off)

VDS=3V,ID=800mA

VDS=10V,ID=800mA,f=1.9GHz

Pin=23dBm

35.0

1000

36.5

dBm

Output power

hadd

GLP

Power added Efficiency

Linear Power Gain

VDS=10V,ID=800mA,f=1.9GHz

DVf Method

13.0

14.5

Rth(ch-c) Thermal Resistance *1

*1:Channel to case /

°C/W

Above parameters, ratings, limits are subject to change.

Mitsubishi Electric

Jan 2003

12 3

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