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2SJ125-12-1D PDF预览

2SJ125-12-1D

更新时间: 2024-02-21 14:46:49
品牌 Logo 应用领域
三菱 - MITSUBISHI 开关光电二极管晶体管
页数 文件大小 规格书
3页 106K
描述
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236

2SJ125-12-1D 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.72Is Samacsys:N
配置:SINGLEFET 技术:JUNCTION
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ125-12-1D 数据手册

 浏览型号2SJ125-12-1D的Datasheet PDF文件第2页浏览型号2SJ125-12-1D的Datasheet PDF文件第3页 

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