品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | / | |
页数 | 文件大小 | 规格书 |
2页 | 79K | |
描述 | ||
Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SC3440-T12-1F | MITSUBISHI | Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 |
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2SC3440-T12-1G | MITSUBISHI | Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 |
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2SC3441 | ISAHAYA | SILICON NPN EPTAXIAL TRANSISTOR |
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2SC3441_10 | ISAHAYA | FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
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2SC3443 | TYSEMI | High hFE=150 to 800. High collector current (Ic=2A). High collector dissipation Pc=500mW. |
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2SC3443 | ISAHAYA | FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
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