生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CDFM-F6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
外壳连接: | EMITTER | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 9 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 10 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-CDFM-F6 | 元件数量: | 1 |
端子数量: | 6 | 最高工作温度: | 175 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 20 W | 最大功率耗散 (Abs): | 20 W |
最小功率增益 (Gp): | 4.7 dB | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SC3105 | MITSUBISHI | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
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2SC3110 | ISC | isc Silicon NPN RF Transistor |
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2SC3110TMG | PANASONIC | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili |
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2SC3112 | TOSHIBA | TRANSISTOR (FOR AUDIO AMPLIFIER AND SWITCHING APPLICATIONS) |
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2SC3112 | SWST | 小信号晶体管 |
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2SC3112_07 | TOSHIBA | Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications |
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