生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, R-CQPM-F4 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.84 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 17 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 10 | 最高频带: | VERY HIGH FREQUENCY BAND |
JESD-30 代码: | R-CQPM-F4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 175 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 40 W | 最大功率耗散 (Abs): | 4 W |
最小功率增益 (Gp): | 11.8 dB | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | QUAD |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SC2629 | MITSUBISHI | NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) |
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2SC2630 | MITSUBISHI | NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) |
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2SC2631 | PANASONIC | Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) |
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2SC2631R | ETC | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-226AA |
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2SC2631S | ETC | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-226AA |
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2SC2632 | PANASONIC | Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) |
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