生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, R-CQPM-F4 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.82 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 17 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | R-CQPM-F4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 175 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | POST/STUD MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 20 W |
最大功率耗散 (Abs): | 2 W | 最小功率增益 (Gp): | 13 dB |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | QUAD | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SC2628 | MITSUBISHI | NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) |
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2SC2629 | MITSUBISHI | NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) |
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2SC2630 | MITSUBISHI | NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) |
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2SC2631 | PANASONIC | Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) |
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2SC2631R | ETC | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-226AA |
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2SC2631S | ETC | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-226AA |
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