品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | 晶体管 | |
页数 | 文件大小 | 规格书 |
1页 | 163K | |
描述 | ||
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, PNP, Silicon, SC-43, 3 PIN |
生命周期: | Obsolete | 零件包装代码: | SC-43 |
包装说明: | CYLINDRICAL, O-PBCY-W3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.2 A | 集电极-发射极最大电压: | 50 V |
配置: | Single | 最小直流电流增益 (hFE): | 150 |
JESD-30 代码: | O-PBCY-W3 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.3 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA999L-11-E | MITSUBISHI | Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 |
获取价格 |
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2SA999L-11-G | MITSUBISHI | Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 |
获取价格 |
|
2SA999L-T11-F | MITSUBISHI | Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 |
获取价格 |
|
2SA999-T11-F | MITSUBISHI | Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 |
获取价格 |
|
2SA999-T11-G | MITSUBISHI | Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 |
获取价格 |
|
2SAI633 | ETC | TRANSISTORS |
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