品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | 放大器晶体管 | |
页数 | 文件大小 | 规格书 |
4页 | 164K | |
描述 | ||
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |
生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.2 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 400 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1300 | WINNERJOIN | TRANSISTOR (PNP) |
获取价格 |
|
2SA1300 | TOSHIBA | TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS) |
获取价格 |
|
2SA1300 | TRSYS | Plastic-Encapsulated Transistors |
获取价格 |
|
2SA1300 | DCCOM | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR |
获取价格 |
|
2SA1300 | SECOS | PNP Plastic Encapsulated Transistor |
获取价格 |
|
2SA1300 | UTC | SILICON PNP EPITAXAL TYPE |
获取价格 |