是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | MODULE |
包装说明: | MODULE-25 | 针数: | 25 |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 30 A |
集电极-发射极最大电压: | 1200 V | 配置: | COMPLEX |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-P23 |
元件数量: | 7 | 端子数量: | 23 |
最高工作温度: | 125 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 120 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 610 ns |
标称接通时间 (ton): | 140 ns | VCEsat-Max: | 2.2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MITA300RF1700PTED | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, | |
MITA30WB600TMH | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, MINI PACKAGE-23 | |
MITB10WB1200TMH | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 17A I(C), 1200V V(BR)CES, N-Channel, MODULE-23 | |
MITB15WB1200TMH | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 29A I(C), 1200V V(BR)CES, N-Channel, MODULE-23 | |
MITH225PF1200LP | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, | |
MITH300PF1200LP | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, | |
MITH450PF1200LP | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, | |
MITI-3V1 | HAMLIN |
获取价格 |
Ultra-miniature normally open switch with 7.00mm x 1.80mm | |
MITI-3V1-6-10 | LITTELFUSE |
获取价格 |
Dry Reed Switch, | |
MITI-7 | LITTELFUSE |
获取价格 |
7mm Ultra-Miniature Reed Switch |