Datasheet > 射频和微波 > 射频/微波开关> HSWA2-30DR+TB

HSWA2-30DR+TB

更新时间： 2024-01-12 03:18:29

品牌	Logo	应用领域
MINI		射频和微波开关射频开关微波开关光电二极管
页数	文件大小	规格书
11页	615K
描述
SPDT RF SWITCH

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技术参数
数据手册

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HSWA2-30DR+TB 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.72
JESD-609代码：	e3	端子面层：	Tin (Sn)
Base Number Matches：	1

HSWA2-30DR+TB 数据手册

SPDT RF SWITCH

50Ω DC-3000 MHz

Absorptive RF Switch with internal driver.

Single Supply Voltage , +3V

Product Features

• Very Low Insertion loss over entire frequency range

• Super High Isolation over entire frequency range

• High Input IP3, +55 dBm typ.

• Single positive supply voltage, +3V

• Very low DC current consumption, 8μA

• Immune to latch up

HSWA2-30DR+

• Unique design-simultaneous switch off of RF1&RF2

+ RoHS compliant in accordance

with EU Directive (2002/95/EC)

Typical Applications

• Base Station Infrastructure

• Portable Wireless

• CATV & DBS

The +Sufﬁx has been added in order to identify RoHS

Compliance. See our web site for RoHS Compliance

methodologies and qualiﬁcations.

• MMDS & Wireless LAN

• Band switch

• Diplexer switches

• Bypass switches

General Description

The HSWA2-30DR+ is a 50Ω high isolation SPDT RF switch designed for wireless applications, covering

a broad frequency range from DC up to 3GHz with low insertion loss. The HSWA2-30DR+ operates on a

single supply voltage +3V. See application note AN-80-006 for +5V supply voltage. This unit includes an

internal CMOS control driver with two-pins control. The switch consumes very low supply current, 8 μA typ.

The HSWA2-30DR+ switch is in a very small size and low proﬁle package, 4x4mm and 0.9mm respec-

tively.

Functional Diagram

RF COMMON

50ꢀ

RF1

RF2

50ꢀ

CONTROL 1

CONTROL 2

Internal Control Driver

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Rev. F

HSWA2-30DR+

080227

Page 1 of 11

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