Datasheet > MIMMD110A120B

MIMMD110A120B

更新时间： 2024-09-17 19:30:39

品牌	Logo	应用领域
MICROSS		局域网光电二极管
页数	文件大小	规格书
2页	1530K
描述
Rectifier Diode, 1 Phase, 2 Element, 1200V V(RRM), Silicon, MODULE-3

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MIMMD110A120B 数据手册

MIMMD110A120B

1200V 110A Rectifier Diode Module

RoHS Compliant

PRODUCT FEATURES

· Glass Passivated Chip

· Aluminum Oxide Ceramic Isolated Metal Baseplate

· Low Reverse Recovery Loss

· Low Forward Voltage

· High Surge Current Capability

· Low Inductance Package

APPLICATIONS

· Field Supply For DC Motors

· Line Rectifiers For Transistorized AC Motor Controllers

· Non-controllable Rectifiers For AC/DC Converter

ABSOLUTE MAXIMUM RATINGS

T_C=25°C unless otherwise specified

Symbol

V_RRM

Parameter

Repetitive Reverse Voltage

Average Forward Current

RMS Forward Current

Non-Repetitive Surge

Forward Current

Test Conditions

Max.

1200

Unit

I_F(AV)

T_C=85°C Rectangular, d=0.5

T_J=45°C, t=10ms, 50Hz, Sine

T_J=45°C,t=8.3ms, 60Hz, Sine

T_J=45°C, t=10ms, 50Hz, Sine

T_J=45°C,t=8.3ms, 60Hz, Sine

110

I_F(RMS)

160

2500

I_FSM

I²t

2700

31250

36450

416

A²s

I²t (For Fusing)

P_D

Power Dissipation

T_J

Junction Temperature

Storage Temperature Range

-40 to +150

-40 to +125

°C

T_STG

V_isol

Insulation Test Voltage

AC, 50Hz, t=1min

3000

101

Weight

ELECTRICAL AND THERMAL CHARACTERISTICS

T_C=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

V_R=1600V

Min. Typ.

Max.

200

Unit

µA

I_RM

Reverse Leakage Current

V_R=1600V, T_J=125°C

I_F=200A

1.3

1.25

1.5

V_F

Forward Voltage

I_F=200A,

T_J=125°C

R_θJC

Thermal Resistance

Junction-to-Case

0.30

°C /W

中文翻译

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