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XX1004-BD-000W PDF预览

XX1004-BD-000W

更新时间: 2024-01-23 12:33:30
品牌 Logo 应用领域
MIMIX 射频和微波射频倍频器微波倍频器
页数 文件大小 规格书
6页 227K
描述
Converter,

XX1004-BD-000W 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.6
Base Number Matches:1

XX1004-BD-000W 数据手册

 浏览型号XX1004-BD-000W的Datasheet PDF文件第2页浏览型号XX1004-BD-000W的Datasheet PDF文件第3页浏览型号XX1004-BD-000W的Datasheet PDF文件第4页浏览型号XX1004-BD-000W的Datasheet PDF文件第5页浏览型号XX1004-BD-000W的Datasheet PDF文件第6页 
10.0-13.0/20.0-26.0 GHz GaAs MMIC  
Active Doubler  
February 2007 - Rev 16-Feb-07  
X1004-BD  
Features  
Chip Device Layout  
Excellent Mixer Driver  
2-Stage Active Design  
Can be Used to Drive XR1002 Receiver  
+15 dBm Output Drive  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
XX1004-BD  
General Description  
Mimix Broadband’s two stage 10.0-13.0/20.0-26.0 GHz  
GaAs MMIC doubler has a +15.0 dBm output drive  
and is an excellent LO doubler that can be used to  
drive fundamental mixer devices. It is also well suited  
to drive Mimix's XR1002 receiver device. This MMIC  
uses Mimix Broadband’s 0.15 µm GaAs PHEMT device  
model technology, and is based upon electron beam  
lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect  
and provide a rugged part with backside via holes  
and gold metallization to allow either a conductive  
epoxy or eutectic solder die attach process.This  
device is well suited for Millimeter-wave  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Gate Bias Voltage (Vg)  
Input Power (RF Pin)  
+6.0 VDC  
110 mA  
+0.3 VDC  
+15.0 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
1
1
Channel Temperature (Tch) MTTF Table  
(1) Channel temperature affects a device's MTBF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Input Frequency Range (fin)  
Output Frequency Range (fout)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Fundamental Level at the Output  
RF Input Power (RF Pin)  
Output Power at +9.0 dBm Pin (Pout)  
Drain Bias Voltage (Vd1,2)  
Gate Bias Voltage (Vg1)  
Gate Bias Voltage (Vg2)  
Supply Current (Id1,2) (Vd=3.5V,Vg1=-0.7V,Vg2=-0.2 Typical)  
Units  
GHz  
GHz  
dB  
Min.  
10.0  
20.0  
-
-
-
-
-
-
Typ.  
-
-
Max.  
13.0  
26.0  
-
-
-
TBD  
TBD  
-30.0  
+9.0  
+15.0  
+3.5  
-0.7  
-0.2  
70  
dB  
dBc  
dBm  
dBm  
VDC  
VDC  
VDC  
mA  
-
-
+5.5  
+0.1  
+0.1  
100  
-1.2  
-1.2  
-
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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