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XP1001 PDF预览

XP1001

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
MIMIX 放大器功率放大器
页数 文件大小 规格书
6页 248K
描述
26.0-40.0 GHz GaAs MMIC Power Amplifier

XP1001 数据手册

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26.0-40.0 GHz GaAs MMIC  
Power Amplifier  
May 2005 - Rev 05-May-05  
P1001  
Features  
Chip Device Layout  
High Linearity Wideband Amplifier  
On-Chip Temperature Compensated  
Output Power Detector  
Balanced Design Provides Good Input/Output Match  
11.0 dB Small Signal Gain  
+31.0 dBm Third Order Intercept (OIP3)  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadbands two stage 26.0-40.0 GHz GaAs MMIC  
power amplifier is optimized for linear operation with a third  
order intercept point of +31.0 dBm. The device also includes  
Lange couplers to achieve good input/output return loss  
and an on-chip temperature compensated output power  
detector.This MMIC uses Mimix Broadbands 0.15 µm GaAs  
PHEMT device model technology, and is based upon  
electron beam lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect and  
provide a rugged part with backside via holes and gold  
metallization to allow either a conductive epoxy or eutectic  
solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and  
VSAT applications.  
Absolute Maximum Ratings  
+6.0 Vdc  
Supply Voltage (Vd)  
700 mA  
Supply Current (Id)  
+0.3 Vdc  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
+14.0 dBm  
-65 to +165 O  
C
4
-55 to MTTF Table  
4
MTTF Table  
(4) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT=25oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
Min.  
Typ.  
-
Max.  
26.0  
-
-
-
-
-
-
-
40.0  
-
-
-
-
-
-
Frequency Range (f)  
18.0  
18.0  
11.0  
+/-1.0  
40.0  
+21.0  
+31.0  
5.5  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)  
dB  
dB  
Gain Flatness (S21)  
Reverse Isolation (S12)  
2
dBm  
dBm  
Vdc  
Vdc  
mA  
Vdc  
Output Power for 1dB Compression (P1dB)  
Output Third Order Intercept Point (OIP3)  
Drain Bias Voltage (Vd1,2,3,4) (Vd5 [Det], Rd=3-6K  
Gate Bias Voltage (Vg1,2,3,4)  
1,2  
-
-
5.6  
0.0  
650  
-
)
-1.0  
-
-
-0.5  
430  
0.28  
Supply Current (Id) (Vd=5.5V,Vg=-0.5V Typical)  
3
Detector (diff) Output at 20dBm  
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.  
(2) Measured using constant current.  
(3) Measured with either Vd5=I.0V, or Vd5=5.5V and Rd=5.6K.  
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2004 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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