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XP1001-BD-000V PDF预览

XP1001-BD-000V

更新时间: 2024-01-01 00:36:36
品牌 Logo 应用领域
MIMIX 射频微波
页数 文件大小 规格书
6页 250K
描述
Wide Band Low Power Amplifier, 26000MHz Min, 40000MHz Max, ROHS COMPLIANT, DIE-13

XP1001-BD-000V 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.82构造:COMPONENT
增益:10 dB最大输入功率 (CW):14 dBm
JESD-609代码:e3最大工作频率:40000 MHz
最小工作频率:26000 MHz射频/微波设备类型:WIDE BAND LOW POWER
端子面层:Matte Tin (Sn)Base Number Matches:1

XP1001-BD-000V 数据手册

 浏览型号XP1001-BD-000V的Datasheet PDF文件第2页浏览型号XP1001-BD-000V的Datasheet PDF文件第3页浏览型号XP1001-BD-000V的Datasheet PDF文件第4页浏览型号XP1001-BD-000V的Datasheet PDF文件第5页浏览型号XP1001-BD-000V的Datasheet PDF文件第6页 
26.0-40.0 GHz GaAs MMIC  
Power Amplifier  
May 2007 - Rev 02-May-07  
P1001-BD  
Features  
Chip Device Layout  
High Linearity Wideband Amplifier  
On-Chip Temperature Compensated  
Output Power Detector  
Balanced Design Provides Good Input/Output Match  
10.0 dB Small Signal Gain  
+29.0 dBm Third Order Intercept (OIP3)  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s two stage 26.0-40.0 GHz GaAs MMIC  
power amplifier is optimized for linear operation with a third  
order intercept point of +29.0 dBm. The device also includes  
Lange couplers to achieve good input/output return loss  
and an on-chip temperature compensated output power  
detector.This MMIC uses Mimix Broadband’s 0.15 µm GaAs  
PHEMT device model technology, and is based upon  
electron beam lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect and  
provide a rugged part with backside via holes and gold  
metallization to allow either a conductive epoxy or eutectic  
solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and  
VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+6.0 Vdc  
Supply Current (Id)  
700 mA  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
+0.3 Vdc  
+14.0 dBm  
-65 to +165 OC  
-55 to MTTF Table  
4
4
MTTF Table  
(4) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT=25oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
Min.  
Typ.  
-
Max.  
Frequency Range (f)  
26.0  
-
-
-
-
-
-
-
40.0  
-
-
-
-
-
-
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)  
18.0  
18.0  
10.0  
+/-2.5  
45.0  
+19.0  
+29.0  
5.5  
Gain Flatness ( S21)  
Reverse Isolation (S12)  
dB  
dB  
2
Output Power for 1dB Compression (P1dB)  
Output Third Order Intercept Point (OIP3)  
Drain Bias Voltage (Vd1,2,3,4) (Vd5 [Det], Rd=3-6K  
Gate Bias Voltage (Vg1,2,3,4)  
dBm  
dBm  
Vdc  
Vdc  
mA  
Vdc  
1,2  
-
)
-
5.6  
0.0  
650  
-
-1.0  
-
-
-0.5  
430  
0.28  
Supply Current (Id) (Vd=5.5V,Vg=-0.5V Typical)  
3
Detector (diff) Output at 20dBm  
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.  
(2) Measured using constant current.  
(3) Measured with either Vd5=I.0V, or Vd5=5.5V and Rd=5.6K  
.
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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