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XP1000-BD-000V

更新时间： 2024-02-21 13:36:20
品牌 Logo 应用领域
MIMIX 射频微波
页数 文件大小 规格书
6页 277K
描述
Wide Band Medium Power Amplifier, 17000MHz Min, 24000MHz Max, ROHS COMPLIANT, DIE-13

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XP1000-BD-000V 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.83构造：COMPONENT
增益：19 dB最大输入功率 (CW)：9 dBm
JESD-609代码：e3最大工作频率：24000 MHz
最小工作频率：17000 MHz射频/微波设备类型：WIDE BAND MEDIUM POWER
端子面层：Matte Tin (Sn)Base Number Matches：1

XP1000-BD-000V 数据手册

 浏览型号XP1000-BD-000V的Datasheet PDF文件第2页浏览型号XP1000-BD-000V的Datasheet PDF文件第3页浏览型号XP1000-BD-000V的Datasheet PDF文件第4页浏览型号XP1000-BD-000V的Datasheet PDF文件第5页浏览型号XP1000-BD-000V的Datasheet PDF文件第6页 
17.0-24.0 GHz GaAs MMIC  
Power Amplifier  
May 2007 - Rev 02-May-07  
P1000-BD  
Features  
Chip Device Layout  
High Linearity Output Amplifier  
Balanced Design Provides Good Input/Output Match  
On-Chip Temperature Compensated  
Output Power Detector  
19.0 dB Small Signal Gain  
+36.0 dBm Third Order Intercept (OIP3)  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
P1000  
General Description  
Mimix Broadband’s two stage 17.0-24.0 GHz GaAs MMIC  
power amplifier is optimized for linear operation with a  
third order intercept point of +36.0 dBm.The device also  
includes Lange couplers to achieve good input/output  
return loss and an on-chip temperature compensated output  
power detector.This MMIC uses Mimix Broadband’s 0.15 µm  
GaAs PHEMT device model technology, and is based upon  
electron beam lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect and  
provide a rugged part with backside via holes and gold  
metallization to allow either a conductive epoxy or eutectic  
solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+6.0 VDC  
700 mA  
+0.3 VDC  
+9.0 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
4
4
Channel Temperature (Tch) MTTF Table  
(4) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)  
Gain Flatness ( S21)  
Reverse Isolation (S12)  
Output Power for 1 dB Compression (P1dB)  
Output Third Order Intercept Point (OIP3)  
Drain Bias Voltage (Vd1,2,3,4) (Vd5 [Det], Rd=3-6K  
Gate Bias Voltage (Vg1,2,3,4)  
Units  
GHz  
dB  
dB  
dB  
Min.  
17.0  
-
-
-
-
-
-
Typ.  
-
Max.  
24.0  
-
-
-
-
-
-
-
+5.6  
0.0  
650  
-
20.0  
20.0  
19.0  
+/-1.0  
40.0  
+25.0  
+36.0  
+5.5  
-0.5  
dB  
dB  
2
dBm  
dBm  
VDC  
VDC  
mA  
VDC  
1,2  
+35.0  
)
-
-1.0  
-
-
Supply Current (Id) (Vd=5.5V,Vg=-0.5V Typical)  
Detector (diff) Output at 20 dBm  
430  
0.28  
3
(1) Measured at +16 dBm per tone output carrier level at 22 GHz.  
(2) Measured using constant current.  
(3) Measured with either Vd5=I.0V or Vd5=5.5V and Rd=5.6K  
.
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
123456

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