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30SPA0536 PDF预览

30SPA0536

更新时间: 2024-01-04 08:35:24
品牌 Logo 应用领域
MIMIX 射频和微波射频放大器微波放大器功率放大器高功率电源
页数 文件大小 规格书
5页 296K
描述
27.0-33.0 GHz GaAs MMIC Power Amplifier

30SPA0536 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.17构造:COMPONENT
增益:21 dBJESD-609代码:e3
最大工作频率:33000 MHz最小工作频率:27000 MHz
射频/微波设备类型:WIDE BAND HIGH POWER端子面层:Matte Tin (Sn)
Base Number Matches:1

30SPA0536 数据手册

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27.0-33.0 GHz GaAs MMIC  
Power Amplifier  
May 2005 - Rev 20-May-05  
30SPA0536  
Features  
Chip Device Layout  
Ka-Band 4 W Power Amplifier  
Balanced Design Provides Good Input/Output Match  
21.0 dB Small Signal Gain  
+35.0 dBm Saturated Output Power  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband's three stage 27.0-33.0 GHz GaAs MMIC  
power amplifier has a small signal gain of 21.0 dB with +35  
dBm saturated output power.The device also includes  
Lange couplers to achieve good input/output return loss.  
This MMIC uses Mimix Broadbands 0.15 µm GaAs PHEMT  
device model technology, and is based upon electron  
beam lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect and  
provide a rugged part with backside via holes and gold  
metallization to allow either a conductive epoxy or eutectic  
solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and  
VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id1,2,3)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+6.5 VDC  
325,825,1575 mA  
+0.3 VDC  
TBD  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
1
1
Channel Temperature (Tch) MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)  
Gain Flatness (S21)  
Units  
GHz  
dB  
dB  
dB  
Min.  
27.0  
-
-
-
-
-
-
Typ.  
-
Max.  
33.0  
-
-
-
-
-
-
+6.0  
0.0  
300  
750  
1435  
20.0  
20.0  
21.0  
+/-1.0  
50.0  
+35.0  
+5.0  
-0.7  
dB  
dB  
Reverse Isolation (S12)  
2
Saturated Output Power (Psat)  
Drain Bias Voltage (Vd1,2,3)  
Gate Bias Voltage (Vg1,2,3)  
Supply Current (Id1) (Vd=5.0V,Vg=-0.7V Typical)  
Supply Current (Id2) (Vd=5.0V,Vg=-0.7V Typical)  
Supply Current (Id3) (Vd=5.0V,Vg=-0.7V Typical)  
dBm  
VDC  
VDC  
mA  
mA  
mA  
-
-1.0  
-
-
-
250  
625  
1185  
(2) Measured using constant current.  
Page 1 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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