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MIG10J855H PDF预览

MIG10J855H

更新时间: 2024-02-18 08:16:54
品牌 Logo 应用领域
东芝 - TOSHIBA 电动机控制双极性晶体管
页数 文件大小 规格书
3页 86K
描述
TRANSISTOR 10 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor

MIG10J855H 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84其他特性:HIGH SPEED
外壳连接:ISOLATED最大集电极电流 (IC):10 A
集电极-发射极最大电压:600 V配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
JESD-30 代码:R-XDIP-T20元件数量:6
端子数量:20封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:DUAL晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):500 ns
标称接通时间 (ton):150 nsBase Number Matches:1

MIG10J855H 数据手册

 浏览型号MIG10J855H的Datasheet PDF文件第2页浏览型号MIG10J855H的Datasheet PDF文件第3页 

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