Datasheet > MIG10J805H

MIG10J805H

更新时间： 2024-01-15 18:23:17

品牌	Logo	应用领域
东芝 - TOSHIBA		电动机控制栅双极性晶体管
页数	文件大小	规格书
3页	30K
描述
TRANSISTOR IGBT, MODULE-20, Insulated Gate BIP Transistor

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技术参数
数据手册

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MIG10J805H 技术参数

生命周期：	Obsolete	零件包装代码：	MODULE
包装说明：	IN-LINE, R-XDIP-T20	针数：	20
Reach Compliance Code：	unknown	风险等级：	5.84
其他特性：	HIGH SPEED	外壳连接：	ISOLATED
最大集电极电流 (IC)：	10 A	集电极-发射极最大电压：	600 V
配置：	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	JESD-30 代码：	R-XDIP-T20
元件数量：	6	端子数量：	20
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	IN-LINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	DUAL
晶体管应用：	MOTOR CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	500 ns	标称接通时间 (ton)：	150 ns
Base Number Matches：	1

MIG10J805H 数据手册

MIG10J805H

TOS HIBA

TENTATIVE

TOSHIBA INTEGRATED 1GBT MODULE SILICON N CHANNEL 1GBT

M I G 1 0 J 8 0 5 H

Units in mm

HIGH POWER SWITCHING APPLICATIONS

MOTOR CONTROL APPLICATIONS

●

Integrates Inverter, Converter Power Circuits in

One Package

Output (Inverter Stage):

3ø 10A/600V High Speed Type 1GBT

(sat) = 2.80V (Max.)

t = 0.30µs (Max.)

t = 0.15µs (Max.)

●

Input (Converter Stage):

3ø 20A/800V Silicon Rectifier

V = 1.30V (Max.)

The Electrodes are Isolated from Case

JEDEC

—

EIAJ

TOSHIBA

Weight: 66g

EQUIVALENT CIRCUIT

961001EAAT

● TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,

when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA

product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA

products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the

precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.

● The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA

CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license

is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

● The information contained herein is subject to change without notice.

1997-08-07 1/3

12 3

中文翻译

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与MIG10J805H相关器件

型号	品牌	获取价格	描述	数据表
MIG10J855	TOSHIBA	获取价格	TRANSISTOR IGBT, Insulated Gate BIP Transistor
MIG10J855E	TOSHIBA	获取价格	TRANSISTOR,IGBT POWER MODULE,3-PH BRIDGE,600V V(BR)CES,10A I(C)
MIG10J855H	TOSHIBA	获取价格	TRANSISTOR 10 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MIG10Q805H	TOSHIBA	获取价格	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MIG10Q806H	TOSHIBA	获取价格	TRANSISTOR 15 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MIG10Q806HA	TOSHIBA	获取价格	TRANSISTOR 15 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MIG10Q906H	TOSHIBA	获取价格	TRANSISTOR 15 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MIG10Q906HA	TOSHIBA	获取价格	TRANSISTOR 15 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MIG150J201H	TOSHIBA	获取价格	TRANSISTOR 150 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MIG150J202H	TOSHIBA	获取价格	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

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