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MIG10J805 PDF预览

MIG10J805

更新时间: 2024-02-17 07:10:19
品牌 Logo 应用领域
东芝 - TOSHIBA 双极性晶体管
页数 文件大小 规格书
3页 137K
描述
TRANSISTOR IGBT, Insulated Gate BIP Transistor

MIG10J805 技术参数

生命周期:Obsolete零件包装代码:MODULE
包装说明:IN-LINE, R-XDIP-T20针数:20
Reach Compliance Code:unknown风险等级:5.84
其他特性:HIGH SPEED外壳连接:ISOLATED
最大集电极电流 (IC):10 A集电极-发射极最大电压:600 V
配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGEJESD-30 代码:R-XDIP-T20
元件数量:6端子数量:20
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:DUAL
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):500 ns标称接通时间 (ton):150 ns
Base Number Matches:1

MIG10J805 数据手册

 浏览型号MIG10J805的Datasheet PDF文件第2页浏览型号MIG10J805的Datasheet PDF文件第3页 

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