Datasheet > MIG10J504H

MIG10J504H

更新时间： 2024-01-13 04:13:39

品牌	Logo	应用领域
东芝 - TOSHIBA		栅双极性晶体管
页数	文件大小	规格书
14页	225K
描述
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,600V V(BR)CES,10A I(C)

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技术参数
数据手册

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MIG10J504H 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
最大集电极电流 (IC)：	10 A	集电极-发射极最大电压：	600 V
元件数量：	1	最高工作温度：	100 °C
子类别：	Insulated Gate BIP Transistors	VCEsat-Max：	2.2 V
Base Number Matches：	1

MIG10J504H 数据手册

MIG10J504H

TOSHIBA Intelligent IGBT Module

MIG10J504H

Features

•

The 4th generation trench gate thin wafer NPT IGBT is

adopted.

•

FRD is built in.

I/O input: logic level (3.3 V / 5 V)

The level shift circuit by high-voltage IC is built in.

The simplification of a high side driver power supply is

possible by the bootstrap system.

Weight: 18 g (typ.)

•

Short circuit protection for a lower arm IGBT and the power

supply under voltage protection function are built in.

•

Short circuit protection state for a lower arm IGBT is outputted.

The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at

the time of vector control.

•

Low thermal resistance by adoption of original high thermal conduction resin.

Since this product is MOS structure, it should be careful of static electricity in the case of handling.

Pin Assignment

PGND U

FO U

IN U

IN X

SGND U

BS U

C U

PGND V

FO V

IN V

IN Y

Mark side

SGND V

BS V

C V

FO W

PGND W

IN W

IN Z

SGND W 12

BS W

C W

2004-03-23

12 3 4 5 6 7...14

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