Datasheet > MIG10J503L

MIG10J503L

更新时间： 2024-01-20 03:52:21

品牌	Logo	应用领域
东芝 - TOSHIBA		栅双极性晶体管
页数	文件大小	规格书
15页	302K
描述
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,600V V(BR)CES,10A I(C)

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技术参数
数据手册

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MIG10J503L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
最大集电极电流 (IC)：	10 A	集电极-发射极最大电压：	600 V
元件数量：	1	最高工作温度：	100 °C
子类别：	Insulated Gate BIP Transistors	VCEsat-Max：	2.1 V
Base Number Matches：	1

MIG10J503L 数据手册

MIG10J503L

TOSHIBA Intelligent Power Module

MIG10J503L

MIG10J503L is an intelligent power module for three-phase

inverter system. The 4th generation low saturation voltage

trench gate IGBT and FRD are connected to a three-phase full

bridge type, and IC by the original high-voltage SOI

(silicon-on-insulator) process drives these directly in response to a

PWM signal. Moreover, since high-voltage level-shifter is built in

high-voltage IC, while being able to perform a direct drive

without the interface with which the upper arm IGBT is

insulated, the drive power supply of an upper arm can be driven

with a bootstrap system, and the simplification of a system is

possible. Furthermore, each lower arm emitter terminal has been

independent so that detection can perform current detection at

Weight: 18 g (typ.)

the time of vector control by current detection resistance of a lower arm. The protection function builds in Under

Voltage Protection, Short Circuit Protection for a low arm IGBT, and Over Temperature Protection. Original high

thermal conduction resin is adopted as a package, and low heat resistance is realized.

Features

•

The 4th generation trench gate thin wafer NPT IGBT is adopted.

FRD is built in.

The level shift circuit by high-voltage IC is built in.

The simplification of a high side driver power supply is possible by the bootstrap system.

Short circuit protection for a low arm IGBT, over temperature protection, and the power supply under voltage

protection function are built in.

•

Short circuit protection for a low arm IGBT and over temperature protection state are outputted.

The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at

the time of vector control.

•

Low thermal resistance by adoption of original high thermal conduction resin.

Since this product is MOS structure, it should be careful of static electricity in the case of handling.

2004-03-16

12 3 4 5 6 7...15

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