品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | 栅 | |
页数 | 文件大小 | 规格书 |
14页 | 309K | |
描述 | ||
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES |
生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.73 |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 600 V |
元件数量: | 1 | 最高工作温度: | 100 °C |
子类别: | Insulated Gate BIP Transistors | VCEsat-Max: | 2.1 V |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
MIG10J504H | TOSHIBA | TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,600V V(BR)CES,10A I(C) |
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MIG10J805 | TOSHIBA | TRANSISTOR IGBT, Insulated Gate BIP Transistor |
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MIG10J805H | TOSHIBA | TRANSISTOR IGBT, MODULE-20, Insulated Gate BIP Transistor |
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MIG10J855 | TOSHIBA | TRANSISTOR IGBT, Insulated Gate BIP Transistor |
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MIG10J855E | TOSHIBA | TRANSISTOR,IGBT POWER MODULE,3-PH BRIDGE,600V V(BR)CES,10A I(C) |
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MIG10J855H | TOSHIBA | TRANSISTOR 10 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor |
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