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MIG10J503H

更新时间： 2024-02-01 03:05:47

品牌	Logo	应用领域
东芝 - TOSHIBA		运动控制电子器件信号电路电动机控制
页数	文件大小	规格书
9页	114K
描述
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,600V V(BR)CES,10A I(C)

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技术参数
数据手册

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MIG10J503H 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
最大集电极电流 (IC)：	10 A	集电极-发射极最大电压：	600 V
元件数量：	1	最高工作温度：	100 °C
子类别：	Insulated Gate BIP Transistors	VCEsat-Max：	2.1 V
Base Number Matches：	1

MIG10J503H 数据手册

TENTATIVE

TOSHIBA INTELLIGENT POWER MODULE

MIG10J503

M I G 1 0 J 5 0 3

MIG10J503 is an intelligent power module for three-phase

inverter system. The 4th generation low saturation voltage trench

gate IGBT and FRD are connected to a three-phase full bridge

type, and IC by the original high-voltage SOI(silicon-on-insulator)

process drives these directly in response to a PWM signal.

Moreover, since high-voltage level-shifter is built in high-voltage

IC, while being able to perform a direct drive without the

interface with which the upper arm IGBT is insulated, the drive

power supply of an upper arm can be driven with a bootstrap

system, and the simplification of

Furthermore, each lower arm emitter terminal has been

system is possible.

Weight:TBD g (Typ.)

independent so that detection can perform current detection at the time of vector control by current detection

resistance of a lower arm. The protection function builds in Under Voltage Protection, Short Circuit Protection, and

Over Temperature Protection. Original high thermal conduction resin is adopted as a package, and low heat

resistance is realized.

Feature

The 4th generation trench gate thin wafer NPT IGBT is adopted.

FRD is built in.

The level shift circuit by high-voltage IC is built in.

The simplification of a high side driver power supply is possible by the bootstrap system.

Short Circuit Protection, Over Temperature Protection , and the Power Supply Under Voltage Protection

function are built in.

Short Circuit Protection and Over Temperature Protection state are outputted.

The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at

the time of vector control.

Low thermal resistance by adoption of original high thermal conduction resin.

Since this product is MOS structure, it should be careful of static electricity in the case of handling.

This tentative specification is a development examination stage, and may change the contents without

a preliminary announcement.

TOSHIBA CONFIDENTIAL

12 3 4 5 6 7...9

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