5秒后页面跳转
MIG100Q6CMB1X PDF预览

MIG100Q6CMB1X

更新时间: 2024-01-11 02:12:05
品牌 Logo 应用领域
三菱 - MITSUBISHI 开关电机
页数 文件大小 规格书
10页 196K
描述
High Power Switching Applications Motor Control Applications

MIG100Q6CMB1X 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.73
模拟集成电路 - 其他类型:AC MOTOR CONTROLLERJESD-30 代码:R-XXMA-X25
功能数量:1端子数量:25
最大输出电流:100 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大供电电压 (Vsup):16.5 V
最小供电电压 (Vsup):13.5 V标称供电电压 (Vsup):15 V
表面贴装:NO技术:HYBRID
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
Base Number Matches:1

MIG100Q6CMB1X 数据手册

 浏览型号MIG100Q6CMB1X的Datasheet PDF文件第2页浏览型号MIG100Q6CMB1X的Datasheet PDF文件第3页浏览型号MIG100Q6CMB1X的Datasheet PDF文件第4页浏览型号MIG100Q6CMB1X的Datasheet PDF文件第5页浏览型号MIG100Q6CMB1X的Datasheet PDF文件第6页浏览型号MIG100Q6CMB1X的Datasheet PDF文件第7页 
MIG100Q6CMB1X  
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>  
MIG100Q6CMB1X (1200V/100A 6in1)  
High Power Switching Applications  
Motor Control Applications  
Integrates inverter power circuits and control circuits (IGBT drive units, protection units for short-circuit  
current, over current, under voltage and over temperature) in one package.  
The electrodes are isolated from case.  
V
= 2.4 V (typ.)  
CE (sat)  
UL recognized File No. E87989  
Weight: 385 g (typ.)  
Equivalent Circuit  
20  
19  
18  
17  
16  
15  
14  
13  
12 11 10  
9
8
7
6
5
4
3
2
1
FO IN  
GND  
V
GND  
FO IN  
GND  
V
GND  
OUT  
FO IN  
V
GND  
OUT  
GND IN FO  
V
GND IN FO  
V
GND IN FO V  
D
D
D
D
D
D
V
OUT  
V
S
GND  
V
GND  
V
OUT  
GND  
V
S
OUT  
GND  
V
S
OUT  
S
S
S
W
V
U
N
P
1.  
V
(U)  
2.  
FO (U)  
(W)  
3.  
10. FO (W) 11.  
17. IN (X) 18.  
IN (U)  
4. GND (U) 5.  
V
(V)  
6.  
12. GND (W) 13.  
19. IN (Z) 20. GND (L)  
FO (V)  
7.  
IN (V)  
FO (L)  
D
D
8. GND (V) 9.  
15. Open 16.  
V
IN (W)  
IN (Y)  
V
(L)  
D
14.  
D
Open  
2004-10-01 1/10  

与MIG100Q6CMB1X相关器件

型号 品牌 获取价格 描述 数据表
MIG10J503 TOSHIBA

获取价格

TOSHIBA INTELLIGENT POWER MODULE
MIG10J503H TOSHIBA

获取价格

TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,600V V(BR)CES,10A I(C)
MIG10J503L MITSUBISHI

获取价格

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES
MIG10J503L TOSHIBA

获取价格

TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,600V V(BR)CES,10A I(C)
MIG10J504H TOSHIBA

获取价格

TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,600V V(BR)CES,10A I(C)
MIG10J805 TOSHIBA

获取价格

TRANSISTOR IGBT, Insulated Gate BIP Transistor
MIG10J805H TOSHIBA

获取价格

TRANSISTOR IGBT, MODULE-20, Insulated Gate BIP Transistor
MIG10J855 TOSHIBA

获取价格

TRANSISTOR IGBT, Insulated Gate BIP Transistor
MIG10J855E TOSHIBA

获取价格

TRANSISTOR,IGBT POWER MODULE,3-PH BRIDGE,600V V(BR)CES,10A I(C)
MIG10J855H TOSHIBA

获取价格

TRANSISTOR 10 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor