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5962-9318710H4A PDF预览

5962-9318710H4A

更新时间: 2024-02-26 23:06:12
品牌 Logo 应用领域
MICROSS 静态存储器内存集成电路
页数 文件大小 规格书
11页 259K
描述
SRAM Module, 128KX32, 17ns, CMOS, CPGA66, PGA-66

5962-9318710H4A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PGA, PGA66,11X11Reach Compliance Code:unknown
风险等级:5.88最长访问时间:17 ns
I/O 类型:COMMONJESD-30 代码:S-XPGA-P66
JESD-609代码:e0内存密度:4194304 bit
内存集成电路类型:SRAM MODULE内存宽度:32
端子数量:66字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX32输出特性:3-STATE
封装主体材料:CERAMIC封装代码:PGA
封装等效代码:PGA66,11X11封装形状:SQUARE
封装形式:GRID ARRAY并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
筛选级别:38535Q/M;38534H;883B最大待机电流:0.0116 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.6 mA标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb) - hot dipped
端子形式:PIN/PEG端子节距:2.54 mm
端子位置:PERPENDICULARBase Number Matches:1

5962-9318710H4A 数据手册

 浏览型号5962-9318710H4A的Datasheet PDF文件第2页浏览型号5962-9318710H4A的Datasheet PDF文件第3页浏览型号5962-9318710H4A的Datasheet PDF文件第4页浏览型号5962-9318710H4A的Datasheet PDF文件第5页浏览型号5962-9318710H4A的Datasheet PDF文件第6页浏览型号5962-9318710H4A的Datasheet PDF文件第7页 
SRAM  
AS8S128K32  
Austin Semiconductor, Inc.  
128K x 32 SRAM  
PIN ASSIGNMENT  
(Top View)  
SRAM MEMORY ARRAY  
68 Lead CQFP (Q)  
AVAILABLE AS MILITARY  
SPECIFICATIONS  
• SMD 5962-95595: -Q  
• SMD 5962-93187: -P or -PN  
• MIL-STD-883  
FEATURES  
• Access times of 15, 17, 20, 25, 35, and 45 ns  
• Built in decoupling caps for low noise operation  
• Organized as 128K x32; User configured as  
256Kx16 or 512K x8  
• Operation with single 5 volt supply  
• Low power CMOS  
• TTL Compatible Inputs and Outputs  
• 2V Data Retention, Low power standby  
66 Lead PGA- Pins 8, 21, 28, 39 are grounds (P)  
OPTIONS  
MARKINGS  
Timing  
15ns  
-15  
-17  
-20  
-25  
-35  
-45  
17ns  
20ns  
25ns  
35ns  
45ns  
Package  
Ceramic Quad Flatpack  
Pin Grid Array -8 Series  
Pin Grid Array -8 Series  
Q
P
PN  
No. 702  
No. 802  
No. 802  
66 Lead PGA- Pins 8, 21, 28, 39 are no connects (PN)  
NOTE: PN indicates a no connect on pins 8, 21, 28, 39  
GENERAL DESCRIPTION  
The Austin Semiconductor, Inc. AS8S128K32 is a 4 Mega-  
bit CMOS SRAM Module organized as 128Kx32-bits and user  
configurable to 256Kx16 or 512Kx8. The AS8S128K32 achieves  
high speed access, low power consumption and high reliability  
by employing advanced CMOS memory technology.  
The military temperature grade product is suited for mili-  
tary applications.  
CE4  
The AS8S128K32 is offered in a ceramic quad flatpack mod-  
ule per SMD-5962-95595 with a maximum height of 0.140 inches.  
This module makes use of a low profile, mutlichip module de-  
sign.  
WE4  
M3  
CE3  
WE3  
M2  
I/O 24 - I/O 31  
This device is also offered in a 1.075 inch square ceramic  
pin grid array per SMD 5692-93187, which has a maximum height  
of 0.195 inches. This package is also a low profile, multi-chip  
module design reducing height requirements to a minimum.  
CE2  
M1  
WE2  
I/O 16 - I/O 23  
CE1  
M0  
WE1  
I/O 8 - I/O 23  
OE  
A0 - 16  
For more products and information  
please visit our web site at  
I/O 0 - I/O 7  
www.austinsemiconductor.com  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS8S128K32  
Rev. 3.5 7/00  
1

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