2N5114
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N5114
FEATURES
This analog switch is designed for inverting switching
DIRECT REPLACEMENT FOR SILICONIX 2N5114
LOW ON RESISTANCE
into inverting input of an Operational Amplifier.
rDS(on) ≤ 75Ω
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
6pF
The hermetically sealed TO-18 package is well suited
for hi-reliability and harsh environment applications.
Maximum Temperatures
(See Packaging Information).
Storage Temperature
‐55°C to +200°C
‐55°C to +200°C
2N5114 Benefits:
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Low On Resistance
D(off) ≤ 500 pA
Switches directly from TTL logic
I
500mW
2N5114 Applications:
Gate Current (Note 1)
IG = ‐50mA
Analog Switches
Commutators
Choppers
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
VGDS = 30V
VGSS = 30V
2N5114 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
VGS(F)
CHARACTERISTIC
MIN
30
4
‐‐
‐‐
‐‐
‐‐
‐30
‐‐
‐‐
TYP.
‐‐
‐‐
‐0.7
‐1.0
‐0.7
‐0.5
‐‐
5
‐5
‐10
‐10
‐10
‐‐
MAX
‐‐
10
‐1
‐1.3
‐‐
‐‐
‐90
500
‐‐
‐500
‐‐
UNITS
V
CONDITIONS
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
IG = 1µA, VDS = 0V
VDS = ‐15V, ID = ‐1nA
IG = ‐1mA, VDS = 0V
VGS = 0V, ID = ‐15mA
VDS(on)
Drain to Source On Voltage
VGS = 0V, ID = ‐7mA
VGS = 0V, ID = ‐3mA
VDS = ‐18V, VGS = 0V
VGS = 20V, VDS = 0V
VDS = ‐15V, ID = ‐1mA
VDS = ‐15V, VGS = 12V
VDS = ‐15V, VGS = 7V
VDS = ‐15V, VGS = 5V
ID = ‐1mA, VGS = 0V
IDSS
IGSS
IG
Drain to Source Saturation Current (Note 2)
Gate Reverse Current
mA
pA
Gate Operating Current
‐‐
‐‐
‐‐
‐‐
ID(off)
Drain Cutoff Current
‐‐
75
rDS(on)
Drain to Source On Resistance
Ω
Click To Buy
2N5114 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
gfs
gos
rDS(on)
Ciss
CHARACTERISTIC
Forward Transconductance
Output Conductance
Drain to Source On Resistance
Input Capacitance
MIN
‐‐
‐‐
‐‐
‐‐
TYP.
4.5
20
‐‐
20
5
MAX
‐‐
‐‐
75
25
7
UNITS
mS
µS
CONDITIONS
VDS = ‐15V, ID = 1mA , f = 1kHz
Ω
ID = 0A, VGS = 0V, f = 1kHz
VDS = ‐15V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = 12V, f = 1MHz
VDS = 0V, VGS = 7V, f = 1MHz
VDS = 0V, VGS = 5V, f = 1MHz
VDG = 10V, ID = 10mA , f = 1kHz
pF
‐‐
Crss
Reverse Transfer Capacitance
‐‐
6
‐‐
‐‐
‐‐
6
en
Equivalent Noise Voltage
‐‐
20
‐‐
nV/√Hz
2N5114 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
td(on)
tr
CHARACTERISTIC
UNITS
CONDITIONS
Turn On Time
6
10
6
VGS(L) = ‐11V
VGS(H) = 0V
Turn On Rise Time
Turn Off Time
ns
td(off)
tf
See Switching Circuit
Turn Off Fall Time
15
Note 1 ‐ Absolute maximum ratings are limiting values above which 2N5114 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
2N5114 SWITCHING CIRCUIT PARAMETERS
SWITCHING TEST CIRCUIT
VDD
VGG
RL
‐10V
20V
Available Packages:
TO-18 (Bottom View)
2N5114 in TO-18
2N5114 in bare die.
430Ω
100Ω
‐15mA
RG
ID(on)
Please contact Micross for full
package and die dimensions
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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