5秒后页面跳转
2N4351 PDF预览

2N4351

更新时间: 2024-02-18 22:06:30
品牌 Logo 应用领域
MICROSS 晶体小信号场效应晶体管
页数 文件大小 规格书
1页 310K
描述
an enhancement mode N-Channel Mosfet

2N4351 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:BCY包装说明:TO-72, CASE 20-03, 4 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.32
Is Samacsys:N配置:Single
最小漏源击穿电压:25 V最大漏极电流 (Abs) (ID):0.03 A
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-72
JESD-30 代码:O-MBCY-W4JESD-609代码:e0
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

2N4351 数据手册

  
2N4351  
N-CHANNEL MOSFET  
The 2N4351 is an enhancement mode N-Channel Mosfet  
FEATURES  
The 2N4351 is an enhancement mode N-Channel  
Mosfet designed for use as a General Purpose amplifier  
or switch  
DIRECT REPLACEMENT FOR INTERSIL 2N4351  
HIGH DRAIN CURRENT  
ID = 100mA  
HIGH GAIN  
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted)  
gfS = 1000µS  
The hermetically sealed TO-72 package is well suited  
for high reliability and harsh environment applications.  
(See Packaging Information).  
Maximum Temperatures  
Storage Temperature  
65°C to +200°C  
55°C to +150°C  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
MAXIMUM CURRENT  
Drain to Source (Note 1)  
MAXIMUM VOLTAGES  
Drain to Body  
2N4351 Features:  
375mW  
100mA  
ƒ
ƒ
ƒ
ƒ
ƒ
Low ON Resistance  
Low Capacitance  
High Gain  
High Gate Breakdown Voltage  
Low Threshold Voltage  
25V  
25V  
Drain to Source  
Peak Gate to Source (Note 2)  
±125V  
2N4351 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVDSS  
VDS(on)  
VGS(th)  
IGSS  
IDSS  
ID(on)  
gfs  
CHARACTERISTIC  
Drain to Source Breakdown Voltage  
Drain to Source “On” Voltage  
Gate to Source Threshold Voltage  
Gate Leakage Current  
MIN  
25  
‐‐  
1
‐‐  
‐‐  
3
1000  
TYP.  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
MAX  
‐‐  
1
UNITS  
V
CONDITIONS  
ID = 10µA, VGS = 0V  
ID = 2mA, VGS = 10V  
VDS = 10V, ID = 10µA  
VGS = ±30V, VDS = 0V  
VGS = 10V, VDS = 10V  
VGS = 10V, VDS = 10V  
5
10  
10  
‐‐  
pA  
nA  
mA  
µS  
Drain Leakage Current “Off”  
Drain Current “On”  
Forward Transconductance  
‐‐  
VDS = 10V, ID = 2mA , f = 1MHz  
rDS(on)  
Drain to Source “On” Resistance  
‐‐  
‐‐  
300  
Ω
VGS = 10V, ID = 0A, f = 1kHz  
Crss  
Ciss  
Cdb  
Reverse Transfer Capacitance  
Input Capacitance  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
1.3  
5
5.0  
VDS = 0V, VGS = 0V , f = 140kHz  
VDS = 10V, VGS = 0V , f = 140kHz  
VDB = 10V, f = 140kHz  
pF  
Drain to Body Capacitance  
Click To Buy  
SWITCHING CHARACTERISTICS  
TIMING WAVEFORMS  
SYMBOL  
td(on)  
tr  
td(off)  
tf  
CHARACTERISTIC  
MAX  
45  
65  
60  
100  
UNITS  
ns  
Turn On Delay Time  
Turn On Rise Time  
Turn Off Delay Time  
Turn Off Fall Time  
SWITCHING TEST CIRCUIT  
Note 1 Absolute maximum ratings are limiting values above which 2N4351 serviceability may be impaired.  
Note 2 Device must not be tested at ±125V more than once or longer than 300ms.  
Micross Components Europe  
Available Packages:  
TO-72 (Bottom View)  
2N4351 in TO-72  
2N4351 in bare die.  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
Please contact Micross for full  
package and die dimensions  
* Body tied to case  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed  
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise  
under any patent or patent rights of Linear Integrated Systems.  
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx  

与2N4351相关器件

型号 品牌 描述 获取价格 数据表
2N4351_TO-72 MICROSS an enhancement mode N-Channel Mosfet

获取价格

2N4352 NJSEMI P-CHANNEL ENHANCEMENT MOSFET

获取价格

2N4352 CALOGIC P-Channel Enhancement Mode MOSFET Amplifier/Switch

获取价格

2N4352 MICROSS an enhancement mode N-Channel Mosfet

获取价格

2N4352_TO-72 MICROSS an enhancement mode N-Channel Mosfet

获取价格

2N4354 ASI Transistor

获取价格