Datasheet > MICROSMD450LR-C-2

MICROSMD450LR-C-2

更新时间： 2024-09-16 22:58:51

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	663K
描述
PTC RESET FUSE 12V 4.5A 1206

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中文翻译

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POLYSWITCH^®Resettable PTCs

Surface Mount > LoRho Series

LoRho SMD PTC for Charging Cable Protection

Description

The Littelfuse LoRho SMD PTC for Charging Cables

provides protection from heat generated due to faults

within the connector such as USB-C, microUSB, and

many others.

As connectors get smaller, their pin-to-pin spacings are

shrinking which increases the opportunity for debris such

as dust, dirt, or water to collect causing a fault. These

faults can generate heat which may damage charging

cables, the devices they charge, or the people using them.

Agency Approvals

Features

AGENCY

AGENCY FILE NUMBER

AMPERE RANGE

4.5A

• SMD compatible with

reﬂow soldering process

• Ultra low internal

resistance

E74889*

• Available in small 1206

and 1210 sizes

• Reset automatically

J 50313999*

4.5A

• Halogen-free, lead-free

and RoHS compliant

• Up to 21Vdc and

4.5A I_hold

* See Electrical CharacteristicTable for approved part numbers.

Applications

Beneﬁts

• Over temperature (OT)

protection for USB

connectors and cables

including:

• Fast charging standards

and protocols including:

– USB Power Delivery (PD) ^†

• Surface mount design

reduces assembly time

and cost compared to

leaded/strapped models

• Well-suited for fast-

charging applications up

to 21Vdc and 4.5A I_hold

– Qualcomm Quick

Charge (QC) ^†

– USBType-C

– USB Micro-B

– USB-A

• Saves PCB space in the

USB-C connector and

ensures that the USB-C

plug meets USB-IF

– Mediatek Pump

Express (PE) ^†

– Samsung Adaptive

Fast Charging (AFC) ^†

dimension speciﬁcations

– Huawei/HiSilicon Fast

Charging Protocol (FCP) ^†

^†These charging protocols are the property of their respective owners.

Electrical Characteristics

Thermal Cut Off Thermal Cut Off

(TCO) - ºC @ 2A (TCO) - ºC @ 3A

Agency

Approvals

Resistance

I_hold

V_max

P_d³typ.

(W)

Part Number

Marking

(A)

(Vdc)

R_min

(Ω)

R_1max

(Ω)

Min

Max

Min

Max

nanoSMD350LR-C

nanoSMD400LR-C

microSMD450LR-C

400CC1206LR-C

450CC1210LR-C

3.50

4.00

4.50

4.00

4.50

100

110

115

110

115

100

1.0

1.3

0.004

0.002 0.0085

0.004

0.002

0.018

0.010

0.008

100

Notes:

TCO and PdTesting Method:

1. I_hold= Hold current: maximum current device will pass without tripping in 20°C still air

Thermal Cut-OffTest–

2. V_max= Maximum voltage device can withstand without damage at rated current (I_max

3. P_d= Power dissipated from device when in the tripped state at 20°C still air

4. R_min= Minimum resistance of device in initial (un-soldered) state

5. R_1max= Maximum resistance of device at 20°C measured one hour after tripping or

reﬂow Soldering of 260°C for 20 seconds

)

1. Put the device into the thermostatic chamber controlled at room temperature or 25°C.

2. Apply the speciﬁed current to the device, and increase the chamber temperature at the

rate of 2°C per minute.

3. Measure the device ambient temperature when the applied current has reduced to less

than 20% of initial value.

(Values speciﬁed were determined using PCBs with 0.115in x 1.0in ounce copper traces)

Power Dissipation–

1. Conduct thermal cut-off test at rated current/voltage.

2. After device trip, decrease the chamber temperature with keeping trip state.

3. Measure the tripped-state power dissipation when the device ambient temperature has

reduced to 30°C or less.

Caution: Operation beyond the speciﬁed rating may result in damage and possible arcing

and ﬂame

Speciﬁcations are subject to change without notice.

Revised: 03/15/19

12 3 4 5

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