生命周期: | Obsolete | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.7 |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-LALF-W2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
JAN1N5802R | MICROSEMI | Rectifier Diode, 1 Element, Silicon, |
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JAN1N5802URS | MICROSEMI | Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2 |
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JAN1N5802US | MICROSEMI | MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP |
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JAN1N5802X | MICROSEMI | Rectifier Diode, 1 Element, Silicon, |
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JAN1N5803 | MICROSEMI | MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP |
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JAN1N5803US | MICROSEMI | RECTIFIERS HIGH EFFICIENCY, ESP, 2.5 AMP TO 20 AMP |
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