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DRF1201 PDF预览

DRF1201

更新时间: 2024-02-17 21:43:04
品牌 Logo 应用领域
美高森美 - MICROSEMI 驱动器MOSFET驱动器驱动程序和接口接口集成电路
页数 文件大小 规格书
4页 166K
描述
MOSFET Driver Hybrid

DRF1201 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.78高边驱动器:YES
接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码:R-XDMA-F10
JESD-609代码:e1湿度敏感等级:1
功能数量:1端子数量:10
标称输出峰值电流:8 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大供电电压:15 V最小供电电压:10 V
表面贴装:YES端子面层:TIN SILVER COPPER
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DRF1201 数据手册

 浏览型号DRF1201的Datasheet PDF文件第2页浏览型号DRF1201的Datasheet PDF文件第3页浏览型号DRF1201的Datasheet PDF文件第4页 
DRF1201  
1000V, 26A, 30MHz  
MOSFET Driver Hybrid  
The DRF1201 hybrid includes a high power gate driver and the power  
MOSFET. The driver output can be congured as Inverting and Non-  
Inverting. It was designed to provide the system designer increased  
exibility and lowered cost over a non-integrated solution.  
FEATURES  
TYPICAL APPLICATIONS  
• Switching Frequency: DC TO 30MHz  
• Low Pulse Width Distortion  
• Single Power Supply  
• Switching Speed 3-4ns  
• B = 1Kv  
• Class C, D and E RF Generators  
• Switch Mode Power Ampliers  
• Pulse Generators  
Vds  
• I = 26A avg.  
ds  
• 1V CMOS Schmitt Trigger Input 1V  
Hysteresis  
• R  
.55 Ohm  
• Ultrasound Transducer Drivers  
• Acoustic Optical Modulators  
ds(on)  
• P = 1100W  
D
• Inverting Non-Inverting Select  
• RoHS Compliant  
Driver Absolute Maximum Ratings  
Symbol  
Parameter  
Min  
Typ  
Max  
15  
Unit  
VDD  
Supply Voltage  
V
IN, FN  
IO PK  
-.7 to +5.5  
Input Single Voltages  
Output Current Peak  
Operating Temperature  
8
A
TJMAX  
175  
°C  
Driver Specications  
Symbol  
Parameter  
Min  
10  
3
Typ  
Max  
15  
Unit  
VDD  
Supply Voltage  
V
IN  
Input Voltage  
5.5  
IN(R)  
IN(F)  
IDDQ  
IO  
Input Voltage Rising Edge  
Input Voltage Falling Edge  
Quiescent Current  
Output Current  
3
3
2
8
3
1
ns  
mA  
A
Ciss  
RIN  
Input Capacitance  
Input Parallel Resistance  
MΩ  
V
VT(ON)  
VT(OFF)  
TDLY  
tr  
Input, Low to High Out (See Truth Table)  
Input, High to Low Out (See Truth Table)  
Time Delay (throughput)  
Rise Time  
0.8  
1.9  
1.1  
2.2  
38  
5
ns  
tf  
Fall Time  
5
ns  
TD  
Prop. Delay  
35  
Microsemi Website - http://www.microsemi.com  

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