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2N6802

更新时间: 2024-02-20 16:28:33
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 176K
描述
N-CHANNEL MOSFET

2N6802 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.19
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):2.5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):25 W
子类别:FET General Purpose Power表面贴装:YES
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

2N6802 数据手册

 浏览型号2N6802的Datasheet PDF文件第2页浏览型号2N6802的Datasheet PDF文件第3页浏览型号2N6802的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
N-CHANNEL MOSFET  
Qualified per MIL-PRF-19500/557  
DEVICES  
LEVELS  
JAN  
2N6802 2N6802U  
JANTX  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
Drain – Source Voltage  
VDS  
VGS  
500  
Vdc  
Vdc  
Gate – Source Voltage  
± 20  
Continuous Drain Current  
ID1  
ID2  
2.5  
Adc  
Adc  
TC = +25°C  
Continuous Drain Current  
1.5  
TC = +100°C  
Max. Power Dissipation  
Ptl  
25 (1)  
1.5 (2)  
W
Ω
Drain to Source On State Resistance  
Operating & Storage Temperature  
Rds(on)  
Top, Tstg  
-55 to +150  
°C  
Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C  
TO-205AF  
(formerly TO-39)  
(2) VGS = 10Vdc, ID = 1.5A  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERTICS  
Drain-Source Breakdown Voltage  
V(BR)DSS  
500  
Vdc  
Vdc  
VGS = 0V, ID = 1mAdc  
Gate-Source Voltage (Threshold)  
VDS VGS, ID = 0.25mA  
VGS(th)1  
VGS(th)2  
VGS(th)3  
2.0  
1.0  
4.0  
5.0  
VDS VGS, ID = 0.25mA, Tj = +125°C  
VDS VGS, ID = 0.25mA, Tj = -55°C  
Gate Current  
IGSS1  
IGSS2  
±100  
±200  
VGS = ±20V, VDS = 0V  
nAdc  
VGS = ±20V, VDS = 0V, Tj = +125°C  
U – 18 LCC  
Drain Current  
VGS = 0V, VDS = 400V  
IDSS1  
IDSS2  
25  
0.25  
µAdc  
mAdc  
VGS = 0V, VDS = 400V, Tj = +125°C  
Static Drain-Source On-State Resistance  
VGS = 10V, ID = 1.5A pulsed  
rDS(on)1  
rDS(on)2  
1.50  
1.60  
Ω
Ω
V
GS = 10V, ID = 2.5A pulsed  
Tj = +125°C  
GS = 10V, ID = 1.5A pulsed  
V
rDS(on)3  
VSD  
3.50  
1.4  
Ω
Diode Forward Voltage  
GS = 0V, ID = 2.5A pulsed  
Vdc  
V
T4-LDS-0149 Rev. 1 (092063)  
Page 1 of 4  

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