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2N6766 PDF预览

2N6766

更新时间: 2024-02-03 12:53:23
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
5页 240K
描述
N-CHANNEL MOSFET

2N6766 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.63Is Samacsys:N
其他特性:RADIATION HARDENED外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):30 A最大漏源导通电阻:0.085 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):500 pF
JEDEC-95代码:TO-204AEJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:150 W最大脉冲漏极电流 (IDM):60 A
认证状态:Not Qualified参考标准:MILITARY STANDARD (USA)
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):225 ns
最大开启时间(吨):135 nsBase Number Matches:1

2N6766 数据手册

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TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
N-CHANNEL MOSFET  
Qualified per MIL-PRF-19500/543  
DEVICES  
LEVELS  
JAN  
2N6770  
2N6770T1  
JANTX  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Drain – Source Voltage  
Symbol  
Value  
Unit  
VDS  
VGS  
500  
Vdc  
Vdc  
Gate – Source Voltage  
± 20  
Continuous Drain Current  
ID1  
ID2  
Ptl  
12  
Adc  
Adc  
W
TC = +25°C  
TC = +100°C  
TC = +25°C  
Continuous Drain Current  
Max. Power Dissipation  
7.75  
150 (1)  
2N6770  
TO-204AA (TO-3)  
Drain to Source On State Resistance  
Operating & Storage Temperature  
Rds(on)  
0.4 (2)  
Ω
Top, Tstg  
-55 to +150  
°C  
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C  
(2) VGS = 10Vdc, ID = 7.75A  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions Symbol Min. Max.  
OFF CHARACTERTICS  
Drain-Source Breakdown Voltage  
Unit  
Vdc  
Vdc  
V(BR)DSS  
500  
V
GS = 0V, ID = 1mAdc  
Gate-Source Voltage (Threshold)  
VDS VGS, ID = 0.25mA  
VGS(th)1  
VGS(th)2  
VGS(th)3  
2.0  
1.0  
4.0  
5.0  
2N6770T1 (TO-254AA)  
V
V
DS VGS, ID = 0.25mA, Tj = +125°C  
DS VGS, ID = 0.25mA, Tj = -55°C  
Gate Current  
GS = ±20V, VDS = 0V  
VGS = ±20V, VDS = 0V, Tj = +125°C  
IGSS1  
IGSS2  
±100  
±200  
V
nAdc  
Drain Current  
V
V
GS = 0V, VDS = 400V  
GS = 0V, VDS = 500V, Tj = +125°C  
IDSS1  
IDSS2  
IDSS3  
25  
1.0  
µAdc  
mAdc  
VGS = 0V, VDS = 400V, Tj = +125°C  
0.25 mAdc  
Static Drain-Source On-State Resistance  
V
GS = 10V, ID2 = 7.75A pulsed  
rDS(on)1  
rDS(on)2  
0.4  
0.5  
Ω
Ω
VGS = 10V, ID1 = 12A pulsed  
Tj = +125°C  
V
GS = 10V, ID2 = 7.75A pulsed  
rDS(on)3  
VSD  
0.88  
1.7  
Ω
Diode Forward Voltage  
VGS = 0V, ID1 = 12A pulsed  
Vdc  
T4-LDS-0044 Rev. 2 (101484)  
Page 1 of 5  

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