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2N6211 PDF预览

2N6211

更新时间: 2024-02-25 07:23:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管开关局域网高功率电源
页数 文件大小 规格书
2页 54K
描述
PNP HIGH POWER SILICON TRANSISTOR

2N6211 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-66
包装说明:TO-66, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.13
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:225 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-66
JESD-30 代码:O-MBFM-P2JESD-609代码:e3
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

2N6211 数据手册

 浏览型号2N6211的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP HIGH POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 461  
Devices  
Qualified Level  
JAN  
2N6211  
2N6212  
2N6213  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
Symbol 2N6211 2N6212 2N6213 Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
225  
300  
350  
6.0  
1.0  
2.0  
350  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VEBO  
IB  
275  
400  
Collector Current  
IC  
Total Power Dissipation  
@ TA = +250C (1)  
@ TC = +250C (2)  
3.0  
35  
W
W
0C  
PT  
Operating & Storage Temperature  
-55 to +200  
TO-66*  
Top, T  
stg  
(TO-213AA)  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance Junction-to-Case  
5.0  
R
qJC  
1) Derate linearly 17.1 mW/0C for TA > +250C  
2) Derate linearly 200 mW/0C for TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 200 mAdc, f = 30-60 Hz  
Symbol  
Min.  
Max.  
Unit  
Vdc  
Vdc  
Vdc  
225  
300  
350  
2N6211  
2N6212  
2N6213  
V(BR)  
CEO  
Collector-Emitter Breakdown Voltage  
IC = 200 mAdc, f = 30-60 Hz, RBE = 50 W  
250  
325  
375  
2N6211  
2N6212  
2N6213  
V(BR)  
CER  
Collector-Emitter Breakdown Voltage  
IC = 200 mAdc, f = 30-60 Hz, RBE = 50 W, VBE = -1.5 Vdc  
V(BR)  
CEX  
275  
350  
400  
2N6211  
2N6212  
2N6213  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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