2N6032

更新时间： 2024-02-17 09:18:17

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管功率双极晶体管
页数	文件大小	规格书
2页	60K
描述
NPN POWER SILICON TRANSISTOR

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技术参数
数据手册

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2N6032 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	70 A	配置：	Single
最小直流电流增益 (hFE)：	20	极性/信道类型：	NPN
子类别：	Other Transistors	Base Number Matches：	1

2N6032 数据手册

TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 528

Devices

Qualified Level

JANTX

JANTXV

2N6032

2N6033

MAXIMUM RATINGS

Ratings

Symbol 2N6032 2N6033 Units

Collector-Emitter Voltage

Collector-Base Voltage

Collector Current

120

150

Vdc

Adc

Vdc

Adc

V_CEO

V_CBO

I_C

Emitter-Base Voltage

7.0

140

V_EBO

I_B

P_T

Base Current

Total Power Dissipation

@ T_C= +25⁰C ⁽¹⁾

Operating & Storage Temperature Range

-65 to +200

⁰C

T_op_,T

stg

TO-3*

(TO-204AA)

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

⁰C/W

Thermal Resistance, Junction-to-Case

1) Derate linearly 800 mW/⁰C between T_C= 25⁰C and T_C= 200⁰C

1.25

qJC

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 200 mAdc

Symbol

Min.

Max.

Unit

Vdc

120

2N6032

2N6033

V_(BR)

CEO

Collector-Emitter Breakdown Voltage

I_C= 200 mAdc

110

140

Vdc

2N6032

2N6033

V_(BR)

CER

Collector-Emitter Breakdown Voltage

I_C= 200 mAdc, V_EB= 1.5 Vdc

120

150

Vdc

2N6032

2N6033

V_(BR)

CEX

Collector-Base Cutoff Current

V_CB= 120 Vdc

V_CB= 150 Vdc

Collector-Emitter Cutoff Current

V_CE= 110 Vdc, V_BE=-1.5 Vdc

V_CE= 135 Vdc, V_BE=-1.5 Vdc

6 Lake Street, Lawrence, MA 01841

mAdc

2N6032

2N6033

I_CBO

2N6032

2N6033

I_CEX

120101

Page 1 of 2

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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