TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
DEVICES
LEVELS
2N5664
2N5665
2N5666
2N5666S
2N5666U3
2N5667
2N5667S
JAN
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
2N5664
2N5666, S 2N5667, S
2N5665
Parameters / Test Conditions
Symbol
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
VCEO
VCBO
VEBO
IB
200
250
300
400
Vdc
Vdc
Vdc
Adc
Adc
TO-66 (TO-213AA)
2N5664, 2N5665
6.0
1.0
5.0
Collector Current
IC
2N5664 2N5666, S
2N5665 2N5667, S
2N5666U3
Total
Power Dissipation
1/
@ TA = +25°C
@ TC = +100°C
2.5
30
1.2
15
1.5
35
PT
W
Operating & Storage Junction
Temperature Range
TO-5
2N5666, 2N5667
TJ, Tstg
-65 to +200
°C
Note: 1) Consult 19500/455 for thermal derating curves.
ELECTRICAL CHARACTERISTICS (TC = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
TO-39 (TO-205AD)
2N5666S, 2N5667S
IC = 10mAdc
2N5664, 2N5666
250
400
V(BR)CER
V(BR)EBO
ICES
Vdc
Vdc
2N5665, 2N5667
Emitter-Base Breakdown Voltage
6.0
IE = 10μAdc
Collector-Emitter Cutoff Current
VCE = 200Vdc
2N5664, 2N5666
2N5665, 2N5667
0.2
0.2
μAdc
VCE = 300Vdc
U-3
2N5666U3
Collector-Base Cutoff Current
VCB = 200Vdc
2N5664, 2N5666
2N5665, 2N5667
0.1
1.0
μAdc
V
CB = 250Vdc
VCB = 300Vdc
CB = 400Vdc
mAdc
ICBO
0.1
1.0
μAdc
mAdc
V
T4-LDS-0062 Rev. 1 (081095)
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