TECHNICAL DATA
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/ 455
Devices
Qualified Level
Devices
Qualified Level
JAN
JAN
JANTX
JANTXV
2N5666
2N5666S 2N5667S
2N5667
JANTX
JANTXV
JANS
2N5664
2N5665
MAXIMUM RATINGS
Ratings
2N5664
2N5665
Symbol 2N5666, S 2N5667, S Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
200
250
300
400
Vdc
Vdc
Vdc
Adc
Adc
VCEO
VCBO
VEBO
IB
TO-66* (TO-213AA)
2N5664, 2N5665
6.0
1.0
5.0
Collector Current
IC
2N5664
2N5665
2.5 (1)
2N5666, S
2N5667, S
1.2 (2)
Total Power Dissipation
@ TA = +250C
@ TC = +1000C
W
W
0C
TO-5*
2N5666, 2N5667
PT
30 (3)
15 (4)
Operating & Storage Junction Temperature Range
-65 to +200
TJ, T
stg
1) Derate linearly 14.3 mW/0C for TA > +250C
2) Derate linearly 6.9 mW/0C for TA > +250C
3) Derate linearly 300 mW/0C for TC >+1000C
4) Derate linearly 150 mW/0C for TC > +1000C
TO-39* (TO-205AD)
2N5666S, 2N5667S
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
250
400
Vdc
2N5664, 2N5666, S
2N5665, 2N5667, S
V(BR)
CER
Emitter-Base Breakdown Voltage
IE = 10 mAdc
6.0
Vdc
V(BR)
EBO
Collector-Emitter Cutoff Current
VCE = 200 Vdc
VCE = 300 Vdc
0.2
0.2
mAdc
2N5664, 2N5666, S
2N5665, 2N5667, S
ICES
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120101
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