TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
DEVICES
LEVELS
JAN
2N5151
2N5153
JANTX
JANTXV
JANS
2N5151L
2N5151U3
2N5153L
2N5153U3
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
VCBO
VEBO
IC
80
100
5.5
2.0
Vdc
Vdc
Vdc
Adc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
2N5151, 2N5153, L
2N5151, 2N5153, L
2N5151U3, 2N5153U3
2N5151U3, 2N5153U3
@ TA = +25°C (1)
@ TC = +25°C (2)
@ TA = +25°C (3)
@ TC = +25°C (4)
1.0
10
1.16
100
TO-5
2N5151L, 2N5153L
(See Figure 1)
PT
W
Operating & Storage Junction Temperature Range
TJ , Tstg
RθJC
-65 to +200
°C
10
1.75 (U3)
Thermal Resistance, Junction-to Case
°C/W
Note:
1) Derate linearly 5.7mW/°C for TA > +25°
2) Derate linearly 66.7mW/°C for TA > +25°
3) Derate linearly 6.63mW/°C for TA > +25°
4) Derate linearly 571mW/°C for TA > +25°
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
TO-39 (TO-205AD)
2N5151, 2N5153
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
V(BR)CEO
IEBO
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
IC = 100mAdc, IB = 0
80
Vdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc, IC = 0
1.0
1.0
µAdc
mAdc
VEB = 5.5Vdc, IC = 0
Collector-Emitter Cutoff Current
V
CE = 60Vdc, VBE = 0
ICES
1.0
1.0
µAdc
mAdc
U-3
VCE = 100Vdc, VBE = 0
2N5151U3, 2N5153U3
Collector-Base Cutoff Current
ICEO
50
µAdc
VCE = 40Vdc, IB = 0
T4-LDS-0132 Rev. 1 (091476)
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