2N5004

更新时间： 2024-02-13 06:53:12

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管功率双极晶体管
页数	文件大小	规格书
2页	203K
描述
NPN POWER SILICON TRANSISTOR

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技术参数
数据手册

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2N5004 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	10 A	配置：	Single
最小直流电流增益 (hFE)：	40	极性/信道类型：	NPN
子类别：	Other Transistors	Base Number Matches：	1

2N5004 数据手册

2N5002

Silicon NPN Transistor

Data Sheet

Description

Applications

• High-speed power-switching

• Power Transistor

Complement to the 2N5003

• NPN silicon transistor

Semicoa Semiconductors offers:

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N5002J)

• JANTX level (2N5002JX)

• JANTXV level (2N5002JV)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV

Features

• Radiation testing (total dose) upon request

• Hermetically sealed TO-59 metal can

• Also available in chip configuration

• Chip geometry 9202

• Reference document:

MIL-PRF-19500/534

Benefits

• Qualification Levels: JAN, JANTX, and

JANTXV

• Radiation testing available

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

Absolute Maximum Ratings

T_C= 25°C unless otherwise specified

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

V_CEO

V_CBO

Rating

100

Unit

Volts

Emitter-Base Voltage

V_EBO

I_C

5.5

Collector Current, Continuous

Power Dissipation, T_A= 25°C

Derate linearly above 25°C

Power Dissipation, T_C= 25°C

Derate linearly above 25°C

P_T

11.4

mW/°C

331

mW/°C

R_θJA

R_θJC

T_J

Thermal Resistance

°C/W

°C

Operating Junction Temperature

Storage Temperature

-65 to +200

°C

T_STG

Semicoa Semiconductors, Inc.

Rev. C

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 1 of 2

www.SEMICOA.com

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