2N4861

更新时间： 2024-02-29 19:57:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体小信号场效应晶体管
页数	文件大小	规格书
4页	62K
描述
N-CHANNEL J-FET

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技术参数
数据手册

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2N4861 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
Base Number Matches：	1

2N4861 数据手册

TECHNICAL DATA

N-CHANNEL J-FET

Qualified per MIL-PRF-19500/ 385

Devices

Qualified Level

JAN

2N4856 2N4857

2N4858 2N4859

2N4860

2N4861

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T_C= +25⁰C unless otherwise noted)

2N4856 2N4859

Parameters / Test Conditions

Symbol 2N4857 2N4860 Unit

2N4858 2N4861

Gate-Source Voltage

V_GS

V_DS

V_DG

I_G

-40

-30

Drain-Source Voltage

Drain-Gate Voltage

Gate Current

TO-18*

(TO-206AA)

Power Dissipation

T_A= +25⁰C ⁽¹⁾

T_C= +25⁰C ⁽²⁾

P_T

0.36

1.8

-65 to +200

⁰C

Operating Junction & Storage Temperature Range

(1) Derate linearly 2.06 mW/⁰C for T_A> 25⁰C.

(2) Derate linearly 10.3 mW/⁰C for T_C> 25⁰C.

T_j, T_stg

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Parameters / Test Conditions

Gate-Source Breakdown Voltage

V_DS= 0, I_G= 1.0 mAdc

Symbol

Min.

Max.

Units

V_(BR)GSS

-40

-30

Vdc

2N4856, 2N4857, 2N4858

2N4859, 2N4860, 2N4861

Gate-Source “Off” State Voltage

-4.0

-2.0

-0.8

-10

-6.0

-4.0

V_DS= 15 Vdc, I_D= 0.5 hAdc

2N4856, 2N4859

2N4857, 2N4860

2N4858, 2N4861

V_GS(on)

Vdc

Gate Reverse Current

V_DS= 0, V_GS= -20 Vdc

V_DS= 0, V_GS= -15 Vdc

Drain Current

2N4856, 2N4857, 2N4858

2N4859, 2N4860, 2N4861

I_GSS

-0.25

I_D(off)

0.25

V_GS= -10 Vds, V_DS= 15 Vdc

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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