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2N4093 PDF预览

2N4093

更新时间: 2024-02-13 17:55:54
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体小信号场效应晶体管开关
页数 文件大小 规格书
2页 54K
描述
N-CHANNEL J-FET Qualified per MIL-PRF-19500/431

2N4093 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:unknown风险等级:5.12
Is Samacsys:N最大漏源导通电阻:80 Ω
FET 技术:JUNCTIONJEDEC-95代码:TO-18
JESD-30 代码:O-MBCY-W3端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.8 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:WIRE
端子位置:BOTTOMBase Number Matches:1

2N4093 数据手册

 浏览型号2N4093的Datasheet PDF文件第2页 
TECHNICAL DATA  
N-CHANNEL J-FET  
Qualified per MIL-PRF-19500/ 431  
Devices  
Qualified Level  
JANTX  
JANTXV  
2N4091  
2N4092  
2N4093  
ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted)  
Parameters / Test Conditions  
Gate-Source Voltage  
Drain-Source Voltage  
Drain-Gate Voltage  
Symbol  
VGS  
VDS  
VDG  
IG  
PT  
Tj  
Tstg  
Value  
-40  
40  
40  
10  
0.36  
-65 to +175  
-65 to +200  
Units  
V
V
V
Gate Current  
Power Dissipation  
mAdc  
W
(1)  
TA = +250C  
TO-18*  
(TO-206AA)  
Operating Junction  
0C  
Operating Storage Temperature Range  
0C  
(1) Derate linearly 2.4 mW/0C for TA > 250C.  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)  
PARAMETERS / TEST CONDITIONS  
Gate-Source Breakdown Voltage  
VDS = 0, IG = -1.0 mAdc  
Gate Reverse Current  
VDS = 0, VGS = -20 Vdc  
Drain Current  
VGS = -12, VDS = 20 Vdc  
VGS = -8.0, VDS = 20 Vdc  
VGS = -6.0, VDS = 20 Vdc  
Drain Current  
Symbol  
V(BR)GSS  
IGSS  
Min.  
Max.  
Units  
Vdc  
-40  
-0.1  
0.1  
hA  
2N4091  
2N4092  
2N4093  
ID(off)  
hA  
VGS = 0, VDS = 20 Vdc  
2N4091  
2N4092  
2N4093  
IDSS  
30  
15  
8.0  
mA  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

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