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2N3741 PDF预览

2N3741

更新时间: 2024-02-23 16:35:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
3页 65K
描述
Medium Power PNP Transistors

2N3741 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.6
Is Samacsys:N最大集电极电流 (IC):4 A
配置:Single最小直流电流增益 (hFE):10
最高工作温度:200 °C极性/信道类型:PNP
最大功率耗散 (Abs):50 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):3 MHz
Base Number Matches:1

2N3741 数据手册

 浏览型号2N3741的Datasheet PDF文件第2页浏览型号2N3741的Datasheet PDF文件第3页 
7516 Central Industrial Drive  
Riviera Beach, Florida  
33404  
PHONE: (561) 842-0305  
FAX: (561) 845-7813  
2N3741  
APPLICATIONS:  
·
·
·
Drivers  
Switches  
Medium-Power Amplifiers  
FEATURES:  
Medium Power  
PNP Transistors  
·
·
·
·
Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp  
High Gain Characteristics: hFE @ IC = 250 mA: 30-100  
Excellent Safe Area Limits  
Complementary to NPN 2N3767 (2N3741)  
DESCRIPTION:  
These power transistors are produced by PPC's DOUBLE  
DIFFUSED PLANAR process. This technology produces high  
voltage devices with excellent switching speeds, frequency  
response, gain linearity, saturation voltages, high current gain,  
and safe operating areas. They are intended for use in  
Commercial, Industrial, and Military power switching, amplifier,  
and regulator applications.  
Ultrasonically bonded leads and controlled die mount  
techniques are utilized to further increase the SOA capability  
and inherent reliability of these devices. The temperature  
range to 200°C permits reliable operation in high ambients, and  
the hermetically sealed package insures maximum reliability  
and long life.  
TO-66  
ABSOLUTE MAXIMUM RATINGS:  
SYMBOL  
CHARACTERISTIC  
VALUE  
UNITS  
Vdc  
Vdc  
Collector-Emitter Voltage  
Emitter-Base Voltage  
80  
7.0  
V
CEO  
*
V *  
EB  
Collector-Base Voltage  
Peak Collector Current  
Continuous Collector Current  
Base Current  
80  
Vdc  
V *  
CB  
10  
4.0  
Adc  
Adc  
Adc  
I *  
C
I *  
C
2.0  
I *  
B
Storage Temperature  
Operating Junction Temperature  
Total Device Dissipation  
-65 to 200  
-65 to 200  
25  
°C  
°C  
Watts  
T
T *  
P *  
*
STG  
J
D
T = 25°C  
C
0.143  
7
W/°C  
°C/W  
Derate above 25°C  
Thermal Impedance  
q JC  
* Indicates JEDEC registered data.  
MSC1041.PDF 03-12-99  

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