2N3740

更新时间： 2024-01-05 04:17:33

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
3页	65K
描述
Medium Power PNP Transistors

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技术参数
数据手册

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2N3740 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	TO-66
包装说明：	FLANGE MOUNT, O-MBFM-P2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.04	Is Samacsys：	N
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	4 A
集电极-发射极最大电压：	60 V	配置：	SINGLE
最小直流电流增益 (hFE)：	30	JEDEC-95代码：	TO-213AA
JESD-30 代码：	O-MBFM-P2	元件数量：	1
端子数量：	2	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	PIN/PEG	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	4 MHz	Base Number Matches：	1

2N3740 数据手册

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

2N3740

APPLICATIONS:

Drivers

Switches

Medium-Power Amplifiers

FEATURES:

Medium Power

PNP Transistors

Low Saturation Voltage: 0.6 V_CE(sat)@ I_C= 1.0 Amp

High Gain Characteristics: hFE @ I_C= 250 mA: 30-100

Excellent Safe Area Limits

Complementary to NPN 2N3766 (2N3740)

DESCRIPTION:

These power transistors are produced by PPC's DOUBLE

DIFFUSED PLANAR process. This technology produces high

voltage devices with excellent switching speeds, frequency

response, gain linearity, saturation voltages, high current gain,

and safe operating areas. They are intended for use in

Commercial, Industrial, and Military power switching, amplifier,

and regulator applications.

Ultrasonically bonded leads and controlled die mount

techniques are utilized to further increase the SOA capability

and inherent reliability of these devices. The temperature

range to 200°C permits reliable operation in high ambients, and

the hermetically sealed package insures maximum reliability

and long life.

TO-66

ABSOLUTE MAXIMUM RATINGS:

SYMBOL

CHARACTERISTIC

VALUE

UNITS

Vdc

Collector-Emitter Voltage

Emitter-Base Voltage

7.0

CEO

V *

Collector-Base Voltage

Peak Collector Current

Continuous Collector Current

Base Current

Vdc

V *

4.0

Adc

I *

2.0

I *

Storage Temperature

Operating Junction Temperature

Total Device Dissipation

-65 to 200

°C

Watts

T *

P *

STG

T = 25°C

0.143

W/°C

°C/W

Derate above 25°C

Thermal Impedance

q JC

* Indicates JEDEC registered data.

MSC1039.PDF 03-12-99

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