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2N3585 PDF预览

2N3585

更新时间: 2024-01-16 12:06:57
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管开关高压局域网
页数 文件大小 规格书
3页 67K
描述
5 Amp, 500V, High Voltage NPN Silicon Power Transistors

2N3585 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-66
包装说明:TO-66, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.09
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-66
JESD-30 代码:O-MBFM-P2JESD-609代码:e3
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
Base Number Matches:1

2N3585 数据手册

 浏览型号2N3585的Datasheet PDF文件第2页浏览型号2N3585的Datasheet PDF文件第3页 
7516 Central Industrial Drive  
Riviera Beach, Florida  
33404  
PHONE: (561) 842-0305  
FAX: (561) 845-7813  
2N3585  
APPLICATIONS:  
·
·
·
Off-Line Inverters  
Switching Regulators  
Motor Controls  
·
·
·
Deflection Circuits  
DC-DC Converters  
High Voltage Amplifiers  
5 Amp, 500V,  
High Voltage  
NPN Silicon Power  
Transistors  
FEATURES:  
·
·
·
High Voltage: 250 to 500V  
·
·
High Current: 2 Amps  
Low VCE (SAT)  
Fast Switching: tf < 3msec.  
High Power: 35 Watts  
DESCRIPTION:  
These power transistors are produced by PPC's DOUBLE  
DIFFUSED PLANAR process. This technology produces high  
voltage devices with excellent switching speeds, frequency  
response, gain linearity, saturation voltages, high current gain,  
and safe operating areas. They are intended for use in  
Commercial, Industrial, and Military power switching, amplifier,  
and regulator applications.  
Ultrasonically bonded leads and controlled die mount  
techniques are utilized to further increase the SOA capability  
and inherent reliability of these devices. The temperature  
range to 200°C permits reliable operation in high ambients, and  
the hermetically sealed package insures maximum reliability  
and long life.  
TO-66  
ABSOLUTE MAXIMUM RATINGS:  
SYMBOL  
CHARACTERISTIC  
VALUE  
UNITS  
Volts  
Volts  
Volts  
Volts  
Amps  
Amps  
Amps  
°C  
VCBO  
*
Collector-Base Voltage  
500  
300  
VCEO  
*
Collector-Emitter Voltage  
Collector-Emitter Voltage RBE = 50W  
Emitter-Base Voltage  
VCER  
*
400  
VEBO  
*
6
IC*  
Peak Collector Current  
5
IC*  
Continuous Collector Current  
Base Current  
2
1
IB*  
TSTG  
TJ*  
*
*
Storage Temperature  
Operating Junction Temperature  
Lead Temperature 1/16" from Case for 10 Sec.  
-65 to 200  
-65 to 200  
235  
°C  
°C  
PT*  
Power Dissipation  
TC = 25°C  
35  
5.0  
Watts  
°C/W  
q JC  
Thermal Impedance  
* Indicates JEDEC registered data.  
MSC1057.PDF 05-19-99  

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